| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,978 pcs
|
18978 pcs | On Request | 1 | On Request | On Request | 1751+ | On Request | On Request | |
|
758 pcs
|
758 pcs | On Request | 1 | On Request | On Request | 1631 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB8447L is an N-Channel Power MOSFET from ON Semiconductor, designed for high-efficiency power management applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 15A at ambient temperature (Ta=25°C) and 50A at case temperature (Tc=25°C).
The device offers a low on-resistance of 8.5mOhm maximum at Vgs=10V and Id=14A, enabling high current handling with minimal conduction losses. It has a gate threshold voltage of 3V maximum at Id=250µA and a total gate charge of 52nC at Vgs=10V, facilitating efficient gate drive.
The MOSFET is housed in a TO-263-3 (D²Pak) surface mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 3.1W at ambient and 60W at case temperature.
-55°C to 150°C (junction).
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
RoHS3 Compliant (unverified).
40V.
15A at Ta=25°C, 50A at Tc=25°C.
8.5mOhm maximum at Vgs=10V, Id=14A.
52nC maximum at Vgs=10V.