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FDB8444TS FDB8444TS is an N-Channel power MOSFET from On Semiconductor. It features a 40V drain-source voltage, 70A continuous drain current, and 5mOhm on-resistance.
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FDB8444TS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB8444TS is an N-Channel power MOSFET from On Semiconductor. It features a 40V drain-source voltage, 70A continuous drain current, and 5mOhm on-resistance.
✓ Total Stock: 500 pcs

FDB8444TS Available from 1 distributor

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FDB8444TS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB8444TS Description

Short technical summary and product information.

The FDB8444TS is an N-Channel power MOSFET manufactured by On Semiconductor. This device is designed for high-efficiency power management applications requiring low on-resistance and high current capability.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 40V, a continuous drain current of 70A at case temperature (Tc=25°C), and a maximum on-resistance of 5mOhm at 70A and 10V gate drive. The gate threshold voltage is 4V maximum, and the device can handle a maximum gate-source voltage of ±20V. It has a maximum gate charge of 338nC and an input capacitance of 8410pF.

 

The MOSFET is housed in a surface-mount TO-263-6 (D²Pak) package with a supplier device package designation of TO-263-5. It is rated for a maximum power dissipation of 181W at case temperature and operates over a junction temperature range of -55°C to 175°C.

FDB8444TS Quick Information

Product Type: MOSFET
Canonical Name: FDB8444TS N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDB8444TS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB8444TS Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current of 70A at 25°C case temperature.
  • Low on-resistance of 5mOhm maximum at 70A.
  • Surface mount TO-263-5 package for compact designs.
  • Wide operating temperature range from -55°C to 175°C.

FDB8444TS Applications

  • Suitable for high-efficiency power conversion circuits.
  • Used in DC-DC converter and voltage regulator modules.
  • Ideal for motor control and load switching applications.
  • Applicable in automotive and industrial power systems.

FDB8444TS FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB8444TS?

The maximum drain-source voltage (Vdss) is 40V.

What is the continuous drain current rating of the FDB8444TS?

The continuous drain current is 70A at case temperature (Tc=25°C) and 20A at ambient temperature (Ta=25°C).

What is the on-resistance of the FDB8444TS?

The maximum on-resistance (Rds(on)) is 5mOhm at a drain current of 70A and gate-source voltage of 10V.

What package does the FDB8444TS come in?

The FDB8444TS is available in a surface-mount TO-263-6 (D²Pak) package, with a supplier device package of TO-263-5.

What is the operating temperature range of the FDB8444TS?

The operating junction temperature range is -55°C to 175°C.

Is the FDB8444TS RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified.

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