| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31,200 pcs
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31200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The FDB8444 is an N-Channel Power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications.
This MOSFET offers a drain-source voltage rating of 40V and a continuous drain current of 70A. The typical on-resistance is 5.5mOhm at 10V gate drive, enabling low conduction losses. The device features a maximum gate charge of 128nC and an input capacitance of 8035pF, factors that influence switching speed and gate drive requirements.
The FDB8444 is housed in a surface-mount D²PAK (TO-263) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 167W.
The FDB8444 has a maximum drain-source voltage of 40V.
The continuous drain current is 70A at case temperature (Tc).
The maximum on-resistance is 5.5mOhm at 70A drain current and 10V gate-source voltage.
It is offered in a D²PAK (TO-263) surface-mount package.
The junction operating temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this is unverified. It is advisable to confirm with the manufacturer.
The maximum power dissipation is 167W at case temperature (Tc).