| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,712 pcs
|
1712 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The FDB8443 is an N-Channel MOSFET from ON Semiconductor, designed for high-current switching applications.
This device features a maximum drain-to-source voltage of 40 V and a continuous drain current rating of 120 A at case temperature, with a low maximum on-resistance of 3 mOhm at 10 V gate drive.
The MOSFET is housed in a surface-mount TO-263-3 (D²Pak) package, providing efficient thermal performance with a maximum power dissipation of 188 W.
Typical applications include power management circuits, DC-DC converters, and motor control systems where high efficiency and reliability are required.
40 V.
120 A at case temperature (Tc), or 25 A at ambient temperature (Ta).
Maximum 3 mOhm at Vgs=10 V and Id=80 A.
TO-263-3 (D²Pak), surface mount.
-55°C to 175°C (junction).
RoHS3 compliant per existing records (unverified).
185 nC at Vgs=10 V.