| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB8442-F085 is an N-Channel power MOSFET designed and manufactured by On Semiconductor. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current of 28A at ambient temperature. The device features a maximum on-resistance of 5mOhm at 80A and 10V gate drive, making it suitable for high-efficiency power switching applications. With a gate charge of 235nC and input capacitance of 12200pF, it provides good switching performance. The MOSFET is housed in a TO-263-3 (D²Pak) surface-mount package, also known as D²PAK (TO-263), which allows for efficient heat dissipation. The maximum power dissipation is 254W at case temperature, and it operates over a junction temperature range of -55°C to 175°C. This component is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is suitable for applications such as power supplies, motor control, and automotive systems where high current and low voltage drop are required.
-55°C to 175°C (junction).
TO-263-3 (D²Pak) surface-mount package, also known as D²PAK (TO-263).
The part is listed as RoHS3 compliant, but this information is unverified.
40V.
28A at ambient temperature.
5mOhm at 80A, 10V.
235nC at 10V.