| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
517 pcs
|
517 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The FDB8441 is an N-Channel PowerTrench MOSFET from On Semiconductor designed for high-efficiency power switching applications. It offers a drain-source breakdown voltage of 40V (minimum) and a continuous drain current of 80A at case temperature (25°C), with a maximum power dissipation of 300W. The typical on-resistance is only 1.9mΩ at 10V gate drive, reducing conduction losses.
Gate charge characteristics include a total gate charge of 215nC (typical) and a Miller charge of 49nC, enabling fast switching. Input capacitance is 15000pF, output capacitance 1250pF, and reverse transfer capacitance 685pF. The device is rated for operating junction temperatures from -55°C to 175°C.
This MOSFET is qualified to AEC Q101 and is suitable for automotive applications such as engine control, powertrain management, solenoid and motor drivers, electronic steering, and integrated starter/alternator systems. It also fits distributed power architectures and primary switches for 12V systems.
The FDB8441 is offered in a surface mount TO-263-3 (D²Pak) package, supplied in tape and reel with 800 units per reel. It is RoHS compliant and lead-free.
The drain-source breakdown voltage is 40V minimum.
The FDB8441 is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.
The junction temperature range is -55°C to 175°C.
Yes, the FDB8441 is RoHS compliant as per the datasheet.
The typical on-resistance is 1.9mΩ at 10V gate drive and 80A, with a maximum of 2.5mΩ at 25°C.
The continuous drain current is 80A at case temperature of 25°C, and 28A at ambient temperature with standard PCB.