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FDB8030L The FDB8030L is an N-Channel power MOSFET from On Semiconductor. It features a 30V drain-source breakdown voltage, 80A continuous drain current, and a low 3.5mOhm on-resistance.
Mfr Part #:

FDB8030L

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDB8030L is an N-Channel power MOSFET from On Semiconductor. It features a 30V drain-source breakdown voltage, 80A continuous drain current, and a low 3.5mOhm on-resistance.
✓ Total Stock: 18,960 pcs

FDB8030L Available from 4 distributors

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Flip Electronics ✓
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17,298 pcs
On Request
17298 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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903 pcs
On Request
903 pcs On Request 1 On Request On Request 12+ On Request On Request
Speed Components Ltd ✓
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586 pcs
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586 pcs On Request 1 On Request On Request 04+ On Request On Request
Hybrid Electronics ✓
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173 pcs
On Request
173 pcs On Request 1 On Request On Request 808 On Request On Request
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FDB8030L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB8030L Description

Short technical summary and product information.

The FDB8030L is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion applications requiring low on-resistance and high current capability.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a continuous drain current of 80A at 25°C, and a maximum on-resistance of 3.5mOhm at 80A and 10V gate drive. The device supports gate drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 2V at 250µA. Total gate charge is 170nC at 5V, and input capacitance is 10500pF at 15V Vds.

 

The FDB8030L is offered in a surface-mount TO-263-3 (D2PAK) package, suitable for automated assembly. It has a maximum power dissipation of 187W at case temperature and an operating junction temperature range of -65°C to 175°C.

FDB8030L Quick Information

Product Type: Power MOSFET
Canonical Name: FDB8030L N-Channel Power MOSFET
Subcategory: Single MOSFET

FDB8030L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB8030L Features

  • N-Channel power MOSFET with 30V drain-source voltage.
  • 80A continuous drain current at 25°C.
  • Low 3.5mOhm maximum on-resistance at 10V gate drive.
  • Surface mount D2PAK (TO-263) package.
  • Wide operating temperature range from -65°C to 175°C.

FDB8030L Applications

  • Suitable for high-efficiency DC-DC converter circuits.
  • Used in low-voltage power management systems.
  • Ideal for motor drive and load switching applications.
  • Applicable in battery protection and power distribution.

FDB8030L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB8030L?

The drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current of the FDB8030L?

The maximum continuous drain current is 80A at 25°C.

What is the on-resistance of the FDB8030L?

The maximum on-resistance is 3.5mOhm at 80A drain current and 10V gate-source voltage.

What package is the FDB8030L available in?

The FDB8030L is available in a surface-mount TO-263-3 (D2PAK) package.

What is the operating temperature range of the FDB8030L?

The operating junction temperature range is -65°C to 175°C.

What is the gate threshold voltage of the FDB8030L?

The maximum gate threshold voltage is 2V at a drain current of 250µA.

What is the maximum power dissipation of the FDB8030L?

The maximum power dissipation is 187W at case temperature.

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