FDB7030L N-Channel Logic Level PowerTrench MOSFET with 30V drain-source voltage and 80A continuous drain current. Low RDS(on) of 7mΩ at 10V gate drive. Surface mount in D²PAK (TO-263) package.
Mfr Part #:

FDB7030L

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Logic Level PowerTrench MOSFET with 30V drain-source voltage and 80A continuous drain current. Low RDS(on) of 7mΩ at 10V gate drive. Surface mount in D²PAK (TO-263) package.
✓ Total Stock: 3,806 pcs

FDB7030L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
806 pcs
806 pcs On Request 1 On Request On Request 02+ On Request On Request

FDB7030L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB7030L Description

Short technical summary and product information.

The FDB7030L is an N-Channel Logic Level PowerTrench MOSFET designed for high efficiency DC/DC converter applications. It features a 30V maximum drain-source voltage and 80A continuous drain current capability. The device offers low on-resistance of 7mΩ maximum at VGS=10V and ID=40A, and 10mΩ at VGS=4.5V and ID=37A.

 

This MOSFET utilizes high performance trench technology to achieve extremely low RDS(on) while maintaining fast switching speeds. Key electrical characteristics include a typical gate charge of 33nC at VGS=5V, input capacitance of 2440pF, and a maximum junction temperature rating of 175°C. The device is specified for operation over a junction temperature range of -65°C to 175°C.

 

The FDB7030L is packaged in a surface mount TO-263-3 (D²Pak) with two leads and a tab. It is supplied on tape and reel with 800 units per reel. The device is suitable for use in synchronous and conventional PWM controller designs, providing improved overall efficiency.

FDB7030L Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDB7030L: N-Channel Logic Level PowerTrench MOSFET, 30V, 80A, TO-263AB
Subcategory: Single MOSFET

FDB7030L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB7030L Features

  • N-Channel PowerTrench MOSFET for high efficiency.
  • 80A continuous drain current at 25°C.
  • Low RDS(on) of 7mΩ maximum at 10V gate drive.
  • 175°C maximum junction temperature rating.
  • Surface mount D²PAK (TO-263) package.

FDB7030L Applications

  • DC/DC converter synchronous rectification.
  • Power management in computing systems.
  • High frequency switching power supplies.
  • Battery protection and load switching.

FDB7030L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB7030L?

The maximum drain-source voltage (Vdss) is 30 V.

What is the continuous drain current rating?

The continuous drain current is 80 A at TA=25°C.

What is the on-resistance (RDS(on)) of the FDB7030L?

RDS(on) is 7 mΩ maximum at VGS=10V, ID=40A, and 10 mΩ maximum at VGS=4.5V, ID=37A.

What is the operating junction temperature range?

The operating junction temperature range is -65°C to 175°C.

What package is the FDB7030L available in?

The FDB7030L is available in a surface mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

Is the FDB7030L RoHS compliant?

The FDB7030L is listed as RoHS3 compliant, but this information is unverified.

What is the gate threshold voltage (Vgs(th))?

The gate threshold voltage ranges from 1 V minimum to 3 V maximum, with a typical value of 1.9 V, at VDS=VGS, ID=250µA.

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