FDB7030BL

The FDB7030BL is an N-Channel MOSFET manufactured by ON Semiconductor, designed for power switching applications. It features a drain-to-source voltage rating of 30 V and a continuous drain current of 60 A (at Ta). The device has a maximum drain-to-source on-resistance of 9 mΩ at a gate drive of 10 V and a drain current of 30 A. The gate charge is 24 nC at Vgs = 5 V, and the input capacitance is 1760 pF at Vds = 15 V, making the device suitable for high-frequency switching circuits.

The MOSFET uses metal-oxide semiconductor (MOSFET) technology and is offered in a TO-263-3 / D2PAK surface-mount package. The supplier device package is D²PAK (TO-263). It supports a maximum power dissipation of 60 W at Tc and operates over a junction temperature range of -65°C to 175°C. The gate threshold voltage is a maximum of 3 V at 250 µA drain current, and the recommended drive voltages are 4.5 V and 10 V.

With its low on-resistance and high current handling, the FDB7030BL is well suited for load switching, DC-DC converters, and other power management circuits. The surface-mount D2PAK package enables efficient heat dissipation when mounted on a suitable PCB copper area.