FDB6035AL FDB6035AL is an N-Channel power MOSFET from onsemi rated at 30V drain-to-source and 48A continuous drain current. It features a low 12mΩ maximum on-resistance and comes in a surface-mount TO-263 package.
Mfr Part #:

FDB6035AL

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB6035AL is an N-Channel power MOSFET from onsemi rated at 30V drain-to-source and 48A continuous drain current. It features a low 12mΩ maximum on-resistance and comes in a surface-mount TO-263 package.
✓ Total Stock: 6,515 pcs

FDB6035AL Available from 3 distributors

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FDB6035AL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB6035AL Description

Short technical summary and product information.

FDB6035AL is an N-Channel power MOSFET manufactured by onsemi. It is designed for switching applications requiring up to 30V drain-to-source voltage and up to 48A of continuous drain current at Ta. The device uses advanced MOSFET technology and provides a maximum on-resistance of 12mΩ at Id=24A and Vgs=10V, enabling efficient low-voltage power switching.

 

In terms of gate drive, the device supports drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 3V at Id=250µA and maximum gate-source voltage of ±20V. The gate charge is 18nC at Vgs=5V, and input capacitance is 1250pF at Vds=15V, offering good switching performance for moderate-speed applications.

 

The MOSFET can dissipate up to 52W at Tc and operates across a junction temperature range of -65°C to 175°C. It is supplied in a TO-263 (D²Pak) surface-mount package with supplier device package designation TO-263AB, making it suitable for automated PCB assembly in power management circuits.

 

Typical applications include load switching, DC-DC converters, and other power control circuits where surface-mount assembly and low on-resistance are required.

FDB6035AL Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET, 30V Drain-to-Source, TO-263
Subcategory: N-Channel MOSFET

FDB6035AL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB6035AL Features

  • N-Channel MOSFET rated for 30V drain-source.
  • Handles 48A continuous drain current.
  • Low 12mΩ maximum on-resistance.
  • Surface-mount TO-263 (D²Pak) package.
  • Wide junction temperature range -65°C to 175°C.

FDB6035AL Applications

  • Suitable for low-voltage power switching circuits.
  • Can be used in DC-DC converter designs.
  • Fits surface-mount power supply assemblies.
  • Enables efficient load switching in electronics.

FDB6035AL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

30 V.

What is the continuous drain current rating?

48A at Ta.

What is the maximum on-resistance?

12mΩ at Id=24A and Vgs=10V.

What package is this device available in?

TO-263-3, D²Pak (2 Leads + Tab), also known as TO-263AB, surface mount.

What is the operating temperature range?

-65°C to 175°C (junction temperature).

What gate drive voltages are supported?

4.5V and 10V.

Is this component RoHS compliant?

Reported as RoHS3 compliant, but this compliance data is unverified and low-confidence.

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