| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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44 pcs
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44 pcs | On Request | 1 | On Request | On Request | 0151P/ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB6030L is an N-Channel Logic Level PowerTrench MOSFET manufactured by On Semiconductor. It is designed for DC/DC converter applications using synchronous or conventional switching PWM controllers, offering faster switching and lower gate charge compared to other MOSFETs with similar ratings.
Key electrical specifications include a maximum drain-to-source voltage of 30V, continuous drain current of 48A at 25°C case temperature, and pulsed drain current capability up to 150A. The device features a low on-resistance of 13mΩ maximum at Vgs=10V and Id=26A, and 17mΩ maximum at Vgs=4.5V. Gate charge is 18nC at Vgs=5V, and input capacitance is 1250pF at Vds=15V.
The MOSFET is housed in a surface-mount TO-263-3 (D²Pak) package with a maximum power dissipation of 52W at 25°C case temperature. It operates over a junction temperature range of -65°C to 175°C and has a thermal resistance junction-to-case of 2.9°C/W.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 48A at 25°C case temperature.
The maximum on-resistance is 13mΩ at Vgs=10V and Id=26A, and 17mΩ at Vgs=4.5V and Id=26A.
The FDB6030L is available in a surface-mount TO-263-3 (D²Pak) package.
The operating junction temperature range is -65°C to 175°C.
The FDB6030L is listed as RoHS3 compliant, but this information is unverified.