| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
241,067 pcs
|
241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDB5690 is an N-Channel PowerTrench MOSFET designed for high efficiency DC/DC converters. It is rated for 60V drain-source voltage and 32A continuous drain current.
Electrical characteristics include low on-resistance of 0.027 ohms typical at Vgs=10V and 0.032 ohms at Vgs=6V. Gate charge is 33 nC typical, input capacitance 1120 pF. The device operates from -65°C to 175°C junction temperature.
The FDB5690 is offered in a surface mount D²PAK (TO-263-3) package. It is supplied in tape and reel packaging with 800 units per reel, 13" reel, 24mm tape width.
This MOSFET is suitable for synchronous or conventional PWM controllers in DC/DC converters, as well as power management circuits requiring high switching efficiency.
The maximum drain-source voltage is 60 V.
The FDB5690 is available in a surface mount D²PAK (TO-263-3) package.
The operating junction temperature range is -65°C to 175°C.
The FDB5690 is listed as RoHS3 compliant, but this is unverified.
32 A at case temperature 25°C.
33 nC typical at Vgs=10V.
Typically 0.027 ohms at Vgs=10V, Id=16A.