FDB52N20TM The FDB52N20TM is an N-Channel power MOSFET from On Semiconductor with a 200V drain-source voltage rating and 52A continuous drain current. It features a low 49mOhm on-resistance at 10V gate drive and is housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

FDB52N20TM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDB52N20TM is an N-Channel power MOSFET from On Semiconductor with a 200V drain-source voltage rating and 52A continuous drain current. It features a low 49mOhm on-resistance at 10V gate drive and is housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 20,693 pcs

FDB52N20TM Available from 3 distributors

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FDB52N20TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB52N20TM Description

Short technical summary and product information.

The FDB52N20TM is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power conversion applications requiring a 200V drain-to-source breakdown voltage and a continuous drain current of 52A.

 

Key electrical characteristics include a maximum on-resistance of 49mOhm at a gate-source voltage of 10V and a drain current of 26A. The device features a typical gate charge of 63nC at 10V and an input capacitance of 2900pF at 25V drain-source voltage, enabling efficient switching performance.

 

The MOSFET is offered in a surface-mount D2PAK (TO-263) package, which provides excellent thermal performance with a maximum power dissipation of 357W at the case temperature. The operating junction temperature range is -55°C to 150°C.

FDB52N20TM Quick Information

Product Type: Power MOSFET
Canonical Name: FDB52N20TM N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FDB52N20TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB52N20TM Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • 52A continuous drain current rating.
  • Low 49mOhm on-resistance at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package.
  • RoHS compliant and REACH unaffected.

FDB52N20TM Applications

  • Suitable for high-efficiency DC-DC converters.
  • Used in motor control and power supply circuits.
  • Ideal for automotive and industrial power systems.
  • Applicable in battery management and protection.

FDB52N20TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB52N20TM?

The maximum drain-source voltage (Vdss) is 200V.

What is the maximum continuous drain current of the FDB52N20TM?

The maximum continuous drain current is 52A at the case temperature.

What is the on-resistance of the FDB52N20TM?

The maximum on-resistance is 49mOhm at a gate-source voltage of 10V and a drain current of 26A.

What package is the FDB52N20TM available in?

The FDB52N20TM is available in a surface-mount D2PAK (TO-263) package.

What is the operating temperature range of the FDB52N20TM?

The operating junction temperature range is -55°C to 150°C.

Is the FDB52N20TM RoHS compliant?

The FDB52N20TM is listed as RoHS3 Compliant.

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