| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,220 pcs
|
12220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,087 pcs
|
1087 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The FDB52N20TM is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power conversion applications requiring a 200V drain-to-source breakdown voltage and a continuous drain current of 52A.
Key electrical characteristics include a maximum on-resistance of 49mOhm at a gate-source voltage of 10V and a drain current of 26A. The device features a typical gate charge of 63nC at 10V and an input capacitance of 2900pF at 25V drain-source voltage, enabling efficient switching performance.
The MOSFET is offered in a surface-mount D2PAK (TO-263) package, which provides excellent thermal performance with a maximum power dissipation of 357W at the case temperature. The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 200V.
The maximum continuous drain current is 52A at the case temperature.
The maximum on-resistance is 49mOhm at a gate-source voltage of 10V and a drain current of 26A.
The FDB52N20TM is available in a surface-mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to 150°C.
The FDB52N20TM is listed as RoHS3 Compliant.