| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,620 pcs
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2620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
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1,453 pcs
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1453 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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725 pcs
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725 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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274 pcs
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274 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB44N25TM is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is built with MOSFET (Metal Oxide) technology and is designed for high-efficiency power conversion applications.
Key electrical specifications include a drain-source voltage (Vdss) of 250V, a continuous drain current of 44A at case temperature (Tc), and a maximum drain-source on-resistance (Rds(on)) of 69mOhm at a gate voltage of 10V and drain current of 22A. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, and the gate-source voltage rating is ±30V. The device offers a maximum gate charge (Qg) of 61nC at 10V, and an input capacitance (Ciss) of 2870pF at 25V drain-source voltage.
The MOSFET is rated for a maximum power dissipation of 307W at case temperature, and operates over a junction temperature range of -55°C to 150°C. It is suitable for switching and linear applications where high voltage and current handling are required.
The FDB44N25TM is offered in a surface-mount D2PAK (TO-263) package, which is also known as TO-263-3, D²Pak (2 Leads + Tab). This package provides good thermal and electrical performance for power management circuits.
The drain-source voltage (Vdss) is 250V.
The device is available in a surface-mount D2PAK (TO-263) package, also known as TO-263-3, D²Pak (2 Leads + Tab).
The operating junction temperature range is -55°C to 150°C.
The device is indicated as RoHS3 Compliant, but this information is unverified.
The maximum continuous drain current is 44A at case temperature (Tc).
The maximum on-resistance is 69 mOhm at a gate voltage of 10V and drain current of 22A.
The maximum gate charge (Qg) is 61 nC at a gate voltage of 10V.