FDB42AN15A0 N-Channel PowerTrench MOSFET rated for 150V drain-source voltage and 35A continuous current. Features low on-resistance of 42mΩ and is qualified to AEC Q101 for automotive applications.
Mfr Part #:

FDB42AN15A0

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET rated for 150V drain-source voltage and 35A continuous current. Features low on-resistance of 42mΩ and is qualified to AEC Q101 for automotive applications.
✓ Total Stock: 17,543 pcs

FDB42AN15A0 Available from 3 distributors

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✓ Non-Authorised
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17,522 pcs
17522 pcs On Request 1 On Request On Request 14+ On Request On Request
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17 pcs
17 pcs On Request 1 On Request On Request On Request On Request On Request
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4 pcs
4 pcs On Request 1 On Request On Request 17+ On Request On Request

FDB42AN15A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Tape Width
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDB42AN15A0 Description

Short technical summary and product information.

The FDB42AN15A0 is an N-Channel PowerTrench MOSFET from ON Semiconductor (originally Fairchild Semiconductor). It is designed for high-efficiency power conversion and demanding automotive applications.

 

Key electrical specifications include a maximum drain-source voltage of 150V, continuous drain current of 35A at Tc=25°C, and a low on-resistance of 42mΩ maximum (36mΩ typical) at Vgs=10V, Id=12A. The device features a low gate charge of 33nC typical and low Miller charge for fast switching performance. It is rated for single pulse avalanche energy of 90mJ.

 

The MOSFET is housed in a surface mount D²PAK (TO-263) package with a junction-to-case thermal resistance of 1.0°C/W. It operates over a junction temperature range of -55°C to 175°C. The part is qualified to AEC Q101 automotive reliability standards.

 

Typical applications include DC/DC converters, offline UPS systems, distributed power architectures, primary switches for 24V and 48V systems, high voltage synchronous rectification, and automotive load control such as direct injection and electronic valve train systems.

FDB42AN15A0 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel PowerTrench MOSFET, 150V, 35A, 42mΩ
Subcategory: N-Channel MOSFET

FDB42AN15A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB42AN15A0 Features

  • 150V drain-source voltage rating.
  • 35A continuous drain current capability.
  • Low on-resistance of 42mΩ maximum.
  • Low gate charge for fast switching.
  • AEC Q101 qualified for automotive use.

FDB42AN15A0 Applications

  • DC/DC converters and offline UPS systems.
  • Primary switch for 24V and 48V systems.
  • High voltage synchronous rectifier circuits.
  • Automotive load control and injection systems.

FDB42AN15A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

150V maximum.

What package is the FDB42AN15A0 available in?

Surface mount D²PAK (TO-263) package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the FDB42AN15A0 RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum on-resistance?

42mΩ at Vgs=10V, Id=12A.

What is the gate charge?

33nC typical, 39nC maximum at Vgs=10V.

Is this MOSFET qualified for automotive applications?

Yes, qualified to AEC Q101.

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