| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,522 pcs
|
17522 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Tape & Reel | |
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The FDB42AN15A0 is an N-Channel PowerTrench MOSFET from ON Semiconductor (originally Fairchild Semiconductor). It is designed for high-efficiency power conversion and demanding automotive applications.
Key electrical specifications include a maximum drain-source voltage of 150V, continuous drain current of 35A at Tc=25°C, and a low on-resistance of 42mΩ maximum (36mΩ typical) at Vgs=10V, Id=12A. The device features a low gate charge of 33nC typical and low Miller charge for fast switching performance. It is rated for single pulse avalanche energy of 90mJ.
The MOSFET is housed in a surface mount D²PAK (TO-263) package with a junction-to-case thermal resistance of 1.0°C/W. It operates over a junction temperature range of -55°C to 175°C. The part is qualified to AEC Q101 automotive reliability standards.
Typical applications include DC/DC converters, offline UPS systems, distributed power architectures, primary switches for 24V and 48V systems, high voltage synchronous rectification, and automotive load control such as direct injection and electronic valve train systems.
150V maximum.
Surface mount D²PAK (TO-263) package.
-55°C to 175°C junction temperature.
RoHS3 Compliant (unverified).
42mΩ at Vgs=10V, Id=12A.
33nC typical, 39nC maximum at Vgs=10V.
Yes, qualified to AEC Q101.