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FDB38N30U FDB38N30U is an N-Channel MOSFET from On Semiconductor with a drain-to-source voltage of 300V and continuous drain current of 38A.
Mfr Part #:

FDB38N30U

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB38N30U is an N-Channel MOSFET from On Semiconductor with a drain-to-source voltage of 300V and continuous drain current of 38A.
✓ Total Stock: 32,008 pcs

FDB38N30U Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
22,620 pcs
On Request
22620 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
9,388 pcs
On Request
9388 pcs On Request 1 On Request On Request On Request On Request On Request
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FDB38N30U Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB38N30U Description

Short technical summary and product information.

The FDB38N30U is an N-Channel MOSFET manufactured by On Semiconductor, designed for high-voltage switching applications. It features a drain-to-source voltage (Vds) of 300V and a maximum continuous drain current (Id) of 38A at case temperature (Tc). The device offers a maximum drain-source on-resistance (Rds(on)) of 120 mOhm at a gate drive voltage of 10V and a drain current of 19A.

 

This MOSFET is housed in a surface-mount D2PAK (TO-263) package, which is suitable for automated assembly processes. It has a maximum power dissipation of 313W at case temperature and an operating junction temperature range of -55°C to 150°C. The gate threshold voltage is 5V at 250µA drain current, and the maximum gate-source voltage is ±30V.

 

The FDB38N30U is suitable for power management and switching applications where high voltage and current handling are required. Its D2PAK package provides good thermal performance for power dissipation in compact designs.

FDB38N30U Quick Information

Product Type: MOSFET
Canonical Name: FDB38N30U N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDB38N30U Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB38N30U Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • Maximum continuous drain current of 38A.
  • Low on-resistance of 120 mOhm at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package.
  • Wide operating temperature range from -55°C to 150°C.

FDB38N30U Applications

  • Suitable for high-voltage power switching circuits.
  • Used in DC-DC converters and power supplies.
  • Ideal for motor control and inverter applications.

FDB38N30U FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDB38N30U?

The FDB38N30U has a maximum drain-to-source voltage (Vds) of 300V.

What is the maximum continuous drain current of the FDB38N30U?

The maximum continuous drain current (Id) is 38A at case temperature (Tc).

What is the on-resistance of the FDB38N30U?

The maximum drain-source on-resistance (Rds(on)) is 120 mOhm at a gate voltage of 10V and drain current of 19A.

What package does the FDB38N30U come in?

The FDB38N30U is available in a surface-mount D2PAK (TO-263) package.

What is the operating temperature range of the FDB38N30U?

The operating junction temperature range is -55°C to 150°C.

Is the FDB38N30U RoHS compliant?

The RoHS status is listed as RoHS3 Compliant but is unverified and has low confidence.

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