| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,248 pcs
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13248 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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FDB3860 is an N-Channel PowerTrench MOSFET from On Semiconductor (originally Fairchild Semiconductor), designed for low on-resistance and low gate charge. It is rated for 100V drain-to-source voltage, ±20V gate-to-source voltage, and continuous drain current of 30A at TC=25°C (6.4A at TA=25°C). The maximum drain-source on-resistance is 37mΩ at VGS=10V and ID=5.9A, with typical gate charge of 21nC and maximum total gate charge of 30nC.
Electrical characteristics include a gate threshold voltage of 2.5V min, 3.8V typ, and 4.5V max; input capacitance of 1310pF typical (1740pF max) at VDS=50V; and single-pulse avalanche energy of 96mJ. The part is 100% UIL tested according to the datasheet. Switching characteristics are specified at VDD=50V, ID=5.9A, VGS=10V with typical turn-on delay of 12ns, rise time 61ns, turn-off delay 17ns, and fall time 31ns.
Designed for switching applications, the FDB3860 is suited for DC-AC conversion and synchronous rectifier circuits. The PowerTrench process provides low rDS(on) and a low gate-charge figure of merit for efficient high-frequency switching. Thermal resistance is 1.75°C/W junction-to-case and 40°C/W junction-to-ambient, with operating junction temperature from -55°C to +150°C.
The device is RoHS compliant and offered in a TO-263AB (D2PAK) surface-mount package (TO-263-3). It is supplied on 330mm reels with 24mm tape width, 800 units per reel.
100V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.
-55°C to +150°C.
Yes, per the datasheet it is RoHS compliant.
30A at TC=25°C; 6.4A at TA=25°C.
37mΩ at VGS=10V, ID=5.9A.
30nC max at VGS=10V (21nC typical).