| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,584 pcs
|
1584 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The FDB3682 is an N-Channel Power MOSFET from On Semiconductor, part of the POWERTRENCH family. It features a drain-source voltage of 100V and continuous drain current of 32A at case temperature 25°C (6A at ambient 25°C). The maximum on-resistance is 36mΩ at Vgs=10V, with typical 32mΩ.
This MOSFET offers low gate charge (18.5nC typical) and low Miller charge, enabling efficient switching. It is capable of single pulse avalanche energy of 55mJ. The device is designed for applications such as consumer appliances, synchronous rectification, battery protection circuits, motor drives, and micro solar inverters.
The FDB3682 is housed in a surface mount D2PAK (TO-263) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C. The device is Pb-Free and RoHS compliant.
The drain-source voltage (Vdss) is 100V.
Continuous drain current is 32A at Tc=25°C, 23A at Tc=100°C, and 6A at Tamb=25°C with Vgs=10V.
Maximum on-resistance is 36mΩ at Vgs=10V, Id=32A; typical is 32mΩ.
Total gate charge is 28nC maximum and 18.5nC typical at Vgs=10V.
The junction temperature range is -55°C to 175°C.
The FDB3682 is available in a surface mount D2PAK (TO-263) package.
Yes, the device is Pb-Free and RoHS compliant per the datasheet.