FDB3652 N-Channel Power MOSFET rated for 100V drain-source voltage and 61A continuous drain current at 25°C case temperature. Typical on-resistance of 14 mOhm at 10V gate drive. Surface mount D2PAK package.
Mfr Part #:

FDB3652

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET rated for 100V drain-source voltage and 61A continuous drain current at 25°C case temperature. Typical on-resistance of 14 mOhm at 10V gate drive. Surface mount D2PAK package.
✓ Total Stock: 265,276 pcs

FDB3652 Available from 3 distributors

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FDB3652 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDB3652 Description

Short technical summary and product information.

The FDB3652 is an N-Channel Power MOSFET from ON Semiconductor, built with POWERTRENCH technology. It is designed for high-efficiency switching applications including synchronous rectification in ATX, server, and telecom power supplies, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.

 

Key electrical ratings include a drain-source breakdown voltage of 100V and continuous drain current of 61A at Tc=25°C (9A at Ta=25°C). The device features low on-resistance: typical 14 mOhm (maximum 16 mOhm) at Vgs=10V, Id=61A. Gate charge is typically 41 nC (maximum 53 nC) at 10V, enabling fast switching. Input capacitance is 2880 pF typical at Vds=25V. The MOSFET is rated for single pulse avalanche energy of 182 mJ.

 

The FDB3652 is offered in a surface mount D2PAK (TO-263-3) package with three leads and a tab for enhanced thermal performance. It operates over a junction temperature range of -55°C to 175°C. Thermal resistance junction-to-case is 1.0°C/W, and junction-to-ambient is 62°C/W (free air) or 43°C/W with a 1 in² copper pad. The device is lead-free and halide-free per the datasheet.

FDB3652 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET, 100V, 61A, D2PAK
Subcategory: N-Channel Power MOSFET

FDB3652 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDB3652 Features

  • N-Channel MOSFET with 100V drain-source rating.
  • Low on-resistance: 16 mOhm max at 10V.
  • High current capability: 61A continuous at 25°C.
  • Low gate charge: 41 nC typical at 10V.
  • Single pulse avalanche rated at 182 mJ.

FDB3652 Applications

  • Synchronous rectification in ATX/server/telecom PSU.
  • Battery protection circuits.
  • Motor drives and uninterruptible power supplies.
  • Micro solar inverters.

FDB3652 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB3652?

The maximum drain-source voltage (Vdss) is 100 V.

What package is the FDB3652 available in?

It is available in a TO-263-3 (D²Pak) surface mount package. The supplier device package is D²PAK (TO-263).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDB3652 RoHS compliant?

The datasheet states it is Pb-Free and Halide Free, and the existing database indicates RoHS3 compliant (unverified).

What is the on-resistance of the FDB3652?

Maximum on-resistance is 16 mOhm at Vgs=10V, Id=61A. Typical on-resistance is 14 mOhm under the same conditions.

What is the maximum drain current?

Continuous drain current is 61 A at Tc=25°C with Vgs=10V, and 9 A at Ta=25°C.

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