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FDB3502 N-Channel MOSFET rated for 75V drain-source voltage and 6A continuous drain current at ambient temperature. Features low on-resistance of 47mOhm at 10V gate drive.
Mfr Part #:

FDB3502

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 75V drain-source voltage and 6A continuous drain current at ambient temperature. Features low on-resistance of 47mOhm at 10V gate drive.
Total Stock: 5,411 pcs

FDB3502 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,931 pcs
4931 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
480 pcs
480 pcs On Request 1 On Request On Request On Request On Request On Request

FDB3502 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Current
Drain Current (Continuous) (Maximum @ Tc)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Power Dissipation (Maximum @ Tc)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB3502 Description

Short technical summary and product information.

The FDB3502 is an N-Channel power MOSFET from ON Semiconductor designed for medium-voltage switching applications. It features a maximum drain-to-source voltage of 75V and can handle continuous drain currents of 6A at ambient temperature and 14A at case temperature. The device offers a low maximum on-resistance of 47mOhm when driven with a 10V gate-source voltage.

 

With a gate charge of 15nC at 10V and input capacitance of 815pF at 40V drain-source, this MOSFET is suitable for efficient switching in power conversion circuits. The maximum gate threshold voltage is 4.5V at 250µA drain current, and the recommended drive voltage is 10V for optimal Rds(on) performance.

 

The FDB3502 is housed in a surface-mount D2PAK (TO-263) package, which provides good thermal performance with a maximum power dissipation of 3.1W at ambient temperature and 41W at case temperature. It operates over a junction temperature range of -55°C to 150°C.

FDB3502 Quick Information

Product Type: MOSFET
Canonical Name: FDB3502 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDB3502 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB3502 Features

  • N-Channel MOSFET with 75V drain-source rating.
  • Continuous drain current of 6A at ambient temperature.
  • Low on-resistance of 47mOhm at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package.
  • Wide operating junction temperature range -55°C to 150°C.

FDB3502 Applications

  • Power management in DC-DC converters.
  • Load switching in automotive systems.
  • Motor control for small to medium motors.
  • Battery protection and charging circuits.

FDB3502 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB3502?

The maximum drain-source voltage (Vdss) is 75V.

What is the continuous drain current rating?

The continuous drain current is 6A at ambient temperature (Ta) and 14A at case temperature (Tc).

What is the on-resistance of the FDB3502?

The maximum on-resistance is 47mOhm at a drain current of 6A and gate-source voltage of 10V.

What package does the FDB3502 come in?

The FDB3502 is available in a surface-mount D2PAK (TO-263) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDB3502 RoHS compliant?

The FDB3502 is listed as RoHS3 compliant, though this data is unverified.

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