Mfr Part #:

FDB33N25TM

N-Channel MOSFET with 250V drain-source voltage rating and 33A continuous drain current. Features 94mΩ on-resistance at 10V gate drive, suitable for high-power switching applications.

✓ Total Stock: 21,517 pcs

FDB33N25TM Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	20,504 pcs On Request	20504 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Trace Tec ✓ Non-Authorised Inventory information	13 pcs On Request	13 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDB33N25TM Description

Short technical summary and product information.

The FDB33N25TM is an N-Channel MOSFET from ON Semiconductor, designed for high-power switching applications. It features a maximum drain-source voltage of 250V and a continuous drain current of 33A at case temperature. The on-resistance is typically 94mΩ at a gate drive of 10V and drain current of 16.5A.

Electrical characteristics include a maximum gate threshold voltage of 5V at 250µA drain current, a maximum gate charge of 48nC at 10V gate-source voltage, and a maximum input capacitance of 2135pF at 25V drain-source voltage. These parameters make it suitable for efficient switching in power converters and motor drives.

The device is housed in a surface-mount D2PAK (TO-263) package, which provides good thermal performance. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 235W at case temperature. The gate-source voltage rating is ±30V, and the recommended drive voltage for achieving low on-resistance is 10V.

FDB33N25TM Quick Information

Product Type: MOSFET

Canonical Name: FDB33N25TM - N-Channel MOSFET, 250V, 33A, D2PAK (TO-263)

Subcategory: Single MOSFETs

FDB33N25TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDB33N25TM Features

N-Channel MOSFET with 250V drain-source voltage.
Maximum continuous drain current of 33A.
Low on-resistance of 94mΩ at 10V gate drive.
High input capacitance of 2135 pF at 25V.
Maximum power dissipation of 235W at case temperature.

FDB33N25TM Applications

Power supply and DC-DC converter circuits.
Motor control and inverter applications.
High-frequency switching power converters.
Automotive and industrial power systems.

FDB33N25TM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDB33N25TM?

250V maximum.

What is the package type of the FDB33N25TM?

Surface mount D2PAK (TO-263).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDB33N25TM RoHS compliant?

The data indicates RoHS3 compliant, but this is unverified.

What is the continuous drain current rating?

33A at case temperature.

What is the gate threshold voltage?

Maximum 5V at 250µA drain current.

What is the maximum gate charge?

48 nC at 10V gate-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	33 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Input Capacitance (Ciss) (Max) @ Vds	2135 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	235 W
Rds On (Max) @ Id, Vgs	94 mOhm
Supplier Device Package	D2PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V