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FDB28N30TM The FDB28N30TM is an N-Channel MOSFET from On Semiconductor rated for 300V drain-source voltage and 28A continuous current. It features a low on-resistance of 129 mΩ and comes in a surface-mount D²PAK (TO-263) package.
Mfr Part #:

FDB28N30TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDB28N30TM is an N-Channel MOSFET from On Semiconductor rated for 300V drain-source voltage and 28A continuous current. It features a low on-resistance of 129 mΩ and comes in a surface-mount D²PAK (TO-263) package.
Total Stock: 7,216 pcs

FDB28N30TM Available from 2 distributors

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FDB28N30TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain Current (Continuous) @ Tc=100°C
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Reverse Transfer Capacitance (Typical)
Supplier Device Package
Technology
Typical Gate Charge
Typical Rds On @ Id, Vgs
Vgs (Max)
Vgs(th) (Max) @ Id

FDB28N30TM Description

Short technical summary and product information.

The FDB28N30TM is an N-Channel MOSFET from On Semiconductor's UniFET family, designed for high-voltage switching applications. It has a drain-source voltage rating of 300V and a continuous drain current of 28A at 25°C case temperature. The device exhibits a maximum on-resistance of 129 mΩ at 10V gate drive and a typical gate charge of 39 nC, enabling efficient switching performance.

 

With a power dissipation of 250W and an operating junction temperature range of -55°C to 150°C, the FDB28N30TM is suitable for demanding power conversion designs. It is 100% avalanche tested and offers a single-pulsed avalanche energy rating of 588 mJ, providing robustness in inductive load switching.

 

The MOSFET is housed in a surface-mount D²PAK (TO-263) package, which facilitates efficient heat dissipation and compact PCB layout. The device is Pb-Free and RoHS compliant, meeting environmental standards for electronic components.

FDB28N30TM Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDB28N30TM MOSFET, N-Channel, 300V, 28A, D²PAK (TO-263)
Subcategory: N-Channel MOSFET

FDB28N30TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDB28N30TM Features

  • 300V drain-source voltage rating.
  • 28A continuous drain current.
  • Low Rds(on) of 129 mΩ max.
  • Surface-mount D²PAK (TO-263) package.
  • RoHS compliant and Pb-Free.

FDB28N30TM Applications

  • Suitable for uninterruptible power supplies.
  • Ideal for AC-DC power converters.
  • Used in power factor correction circuits.
  • Applied in flat panel display TV power.

FDB28N30TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB28N30TM?

300 V.

What is the continuous drain current at 25°C?

28 A.

What is the maximum Rds(on) at 10V gate drive?

129 mΩ at Id = 14 A, Vgs = 10 V.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDB28N30TM RoHS compliant?

The datasheet indicates it is Pb-Free and RoHS compliant.

What package is the FDB28N30TM available in?

D²PAK (TO-263) surface-mount package.

What is the typical gate charge?

39 nC.

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