| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,216 pcs
|
6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
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| Current | |
| Drain Current (Continuous) @ Tc=100°C | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Typical) | |
| Supplier Device Package | |
| Technology | |
| Typical Gate Charge | |
| Typical Rds On @ Id, Vgs | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB28N30TM is an N-Channel MOSFET from On Semiconductor's UniFET family, designed for high-voltage switching applications. It has a drain-source voltage rating of 300V and a continuous drain current of 28A at 25°C case temperature. The device exhibits a maximum on-resistance of 129 mΩ at 10V gate drive and a typical gate charge of 39 nC, enabling efficient switching performance.
With a power dissipation of 250W and an operating junction temperature range of -55°C to 150°C, the FDB28N30TM is suitable for demanding power conversion designs. It is 100% avalanche tested and offers a single-pulsed avalanche energy rating of 588 mJ, providing robustness in inductive load switching.
The MOSFET is housed in a surface-mount D²PAK (TO-263) package, which facilitates efficient heat dissipation and compact PCB layout. The device is Pb-Free and RoHS compliant, meeting environmental standards for electronic components.
300 V.
28 A.
129 mΩ at Id = 14 A, Vgs = 10 V.
-55°C to 150°C (junction).
The datasheet indicates it is Pb-Free and RoHS compliant.
D²PAK (TO-263) surface-mount package.
39 nC.