FDB2710 The FDB2710 is an N-Channel MOSFET from ON Semiconductor featuring a 250V drain-source voltage and 50A continuous drain current. It comes in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

FDB2710

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDB2710 is an N-Channel MOSFET from ON Semiconductor featuring a 250V drain-source voltage and 50A continuous drain current. It comes in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 7 pcs

FDB2710 Available from 1 distributor

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FDB2710 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB2710 Description

Short technical summary and product information.

The FDB2710 is an N-Channel enhancement-mode MOSFET designed and manufactured by ON Semiconductor. This device uses MOSFET (Metal Oxide) technology and is rated for a drain-to-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 50 A at case temperature (Tc). It is suitable for high-power switching applications.

 

The MOSFET features a low on-resistance of 42.5 mOhm maximum at 25 A gate drive of 10 V. The gate charge (Qg) is 101 nC maximum at Vgs = 10 V, and input capacitance (Ciss) is 7280 pF maximum at Vds = 25 V. The gate threshold voltage (Vgs(th)) is 5 V maximum at 250 µA drain current. Maximum gate-source voltage is ±30 V. The device can dissipate up to 260 W at case temperature (Tc).

 

The FDB2710 is offered in a TO-263-3 package, also known as D2Pak (2 Leads + Tab) or TO-263AB. The supplier device package is D2PAK (TO-263). This surface-mount package allows for efficient heat dissipation through the exposed tab. It supports an operating junction temperature range of -55 °C to 150 °C.

 

This N-Channel MOSFET is designed for applications requiring high efficiency and reliability in power conversion, motor control, and similar circuits. The device is claimed to be RoHS3 compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited), though these compliance claims are currently unverified.

FDB2710 Quick Information

Product Type: MOSFET
Canonical Name: On Semiconductor FDB2710 N-Channel MOSFET
Subcategory: MOSFET - Single

FDB2710 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB2710 Features

  • N-Channel MOSFET with 250 V rating.
  • 50 A continuous drain current capability.
  • Low 42.5 mOhm maximum on-resistance.
  • Surface-mount D2PAK (TO-263) package.
  • Wide operating temperature range -55 to 150°C.

FDB2710 Applications

  • High-efficiency power supply switching circuits.
  • DC-DC converter and inverter designs.
  • Motor control and drive applications.
  • Battery management and protection systems.
  • Industrial power management solutions.

FDB2710 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB2710?

The FDB2710 has a drain-to-source voltage (Vdss) rating of 250 V.

What is the continuous drain current rating?

The continuous drain current (Id) is 50 A at case temperature (Tc).

What is the on-resistance of the FDB2710?

The maximum on-resistance (Rds On) is 42.5 mOhm at Id = 25 A and Vgs = 10 V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FDB2710 come in?

The FDB2710 is offered in a surface-mount D2PAK (TO-263) package.

Is the FDB2710 RoHS compliant?

The FDB2710 is claimed to be RoHS3 compliant, but this status is currently unverified.

What is the gate charge of the FDB2710?

The maximum gate charge (Qg) is 101 nC at Vgs = 10 V.

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