| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB2614 is an N-Channel power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-power switching applications requiring a drain-to-source voltage up to 200V and continuous drain current of 62A at Tc.
Key electrical characteristics include a maximum on-resistance of 27mOhm at Vgs=10V and Id=31A, maximum gate charge of 99nC at Vgs=10V, and input capacitance of 7230pF at Vds=25V. The gate threshold voltage is 5V max at Id=250µA, and the maximum gate-source voltage is ±30V. The recommended drive voltage for optimal Rds(on) is 10V.
The device is housed in a TO-263-3 (D2Pak) surface-mount package with a supplier device package of D²PAK (TO-263). It supports a maximum power dissipation of 260W at Tc and an operating junction temperature range from -55°C to 150°C.
200V.
62A at case temperature (Tc).
Maximum 27mOhm at Vgs=10V and Id=31A.
TO-263-3 (D2Pak) surface-mount package, also known as D²PAK (TO-263).
-55°C to 150°C (junction temperature).
RoHS3 compliant (status unverified).