| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120,533 pcs
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120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from ON Semiconductor is designed for high-efficiency power switching applications. It features a drain-source voltage rating of 150V and a continuous drain current of 29A at case temperature 25°C, with a low on-resistance of 54 mOhm at 9A, 10V drive. The device has a gate threshold voltage of 4V max and a maximum gate charge of 34 nC at 10V, enabling fast switching. Input capacitance is 1770 pF at 25V drain-source. The MOSFET is rated for operation from -55°C to 175°C junction temperature and can dissipate up to 135W at case temperature 25°C. It is housed in a TO-263AB (D2PAK) surface-mount package, suitable for automated assembly. This component is commonly used in power supply, DC-DC converter, and motor control circuits where high voltage and efficiency are required.
150V maximum.
29A maximum.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK). Surface mount.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
4V maximum at 250µA drain current.
135W maximum at case temperature 25°C.