| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB2552-F085 is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for power switching applications requiring a drain-source voltage rating of 150V and a continuous drain current of 5A at ambient temperature (25°C) or 37A at case temperature (25°C). The device features a maximum drain-source on-resistance of 36mOhm at a gate-source voltage of 10V and a drain current of 16A, enabling efficient power handling.
Key electrical characteristics include a maximum total gate charge of 51nC at 10V, input capacitance of 2800pF at 25V, and a maximum gate threshold voltage of 4V at 250µA. The device supports a gate-source voltage range of ±20V and a recommended drive voltage of 10V. Maximum power dissipation is 150W at case temperature 25°C, with an operating junction temperature range of -55°C to 175°C.
The FDB2552-F085 is housed in a TO-263-3 (D²Pak) surface-mount package with a supplier device package of D²PAK (TO-263). This package is suitable for power applications requiring efficient heat dissipation through the exposed tab. The MOSFET is designed for use in power management, switching regulators, and other high-voltage applications.
This component is part of On Semiconductor's portfolio, which includes products formerly from Fairchild Semiconductor. The device is intended for use in circuits where high-voltage switching and low on-resistance are critical design parameters.
The drain-to-source voltage rating is 150V.
The continuous drain current is 5A at 25°C ambient temperature and 37A at 25°C case temperature.
The maximum drain-to-source on-resistance is 36mOhm at a drain current of 16A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-263-3 (D²Pak) surface-mount package with supplier device package D²PAK (TO-263).
The maximum power dissipation is 150W at case temperature 25°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.