| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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79,420 pcs
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79420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,413 pcs
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6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,430 pcs
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2430 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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950 pcs
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950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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700 pcs
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700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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156 pcs
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156 pcs | On Request | 1 | On Request | On Request | 1725 | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB2532 is an N-Channel enhancement-mode MOSFET designed for high-power switching applications. It is manufactured by ON Semiconductor and offers a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 79A at 25°C case temperature (8A at ambient temperature). The device features a maximum on-resistance of 16mOhm at 33A drain current and 10V gate-source voltage, ensuring efficient power handling.
Key electrical characteristics include a gate threshold voltage of 4V maximum at 250µA, a maximum gate charge of 107nC at 10V, and an input capacitance of 5870pF at 25V drain-source voltage. The MOSFET is capable of dissipating up to 310W at 25°C case temperature. The recommended gate drive voltages are 6V and 10V, with a maximum gate-source voltage rating of ±20V.
The device is housed in a surface-mount D2PAK (TO-263) package, which is suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. The FDB2532 is RoHS compliant and has an MSL rating of 1 (unlimited).
The drain-source voltage (Vdss) is 150V.
79A at case temperature 25°C, and 8A at ambient temperature 25°C.
Maximum 16mOhm at 33A drain current and 10V gate-source voltage.
Junction temperature range from -55°C to 175°C.
The device is available in a surface-mount D2PAK (TO-263) package.
The FDB2532 is listed as RoHS3 compliant (low confidence, unverified).
Maximum 4V at 250µA drain current.