FDB24AN06LA0 N-Channel PowerTrench MOSFET rated for 60V drain-source voltage and 40A continuous drain current (at Tc=25°C). Features low on-resistance of 19mOhm max at 10V gate drive and is AEC-Q101 qualified for automotive applications.
Mfr Part #:

FDB24AN06LA0

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET rated for 60V drain-source voltage and 40A continuous drain current (at Tc=25°C). Features low on-resistance of 19mOhm max at 10V gate drive and is AEC-Q101 qualified for automotive applications.
✓ Total Stock: 6,565 pcs

FDB24AN06LA0 Available from 1 distributor

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FDB24AN06LA0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB24AN06LA0 Description

Short technical summary and product information.

The FDB24AN06LA0 is an N-Channel PowerTrench MOSFET manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is rated for a maximum drain-source voltage of 60V and can handle a continuous drain current of 40A at Tc=25°C (36A with 5V gate drive). The device features a low maximum on-resistance of 19mΩ at VGS=10V and ID=40A, and 24mΩ at VGS=5V and ID=36A. Typical gate charge is 16nC at 5V, enabling efficient switching with reduced drive requirements.

 

This MOSFET is designed for demanding automotive applications including motor and body load control, ABS systems, powertrain management, and injection systems. It is qualified to AEC Q101, ensuring reliability under extreme conditions. Additional capabilities include single pulse avalanche energy of 36mJ and low body diode QRR for improved efficiency in bridge topologies.

 

The device is supplied in a surface-mount TO-263AB (D²PAK) package with an exposed pad for effective thermal management. Maximum power dissipation is 75W at Tc=25°C, and the operating junction temperature range is -55°C to 175°C. Thermal resistance from junction to case is 2.0°C/W. The part is RoHS3 compliant and available in tape and reel packaging (800 units per reel) for automated assembly.

FDB24AN06LA0 Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: N-Channel PowerTrench MOSFET, 60V, 40A (Tc), TO-263AB
Subcategory: N-Channel MOSFET

FDB24AN06LA0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB24AN06LA0 Features

  • Low on-resistance of 19mOhm at 10V.
  • Optimized for automotive AEC-Q101 applications.
  • Fast switching with 16nC typical gate charge.
  • High avalanche capability up to 36mJ.
  • Wide operating temperature range -55°C to 175°C.

FDB24AN06LA0 Applications

  • Motor and body load control systems.
  • ABS and powertrain management modules.
  • DC-DC converters and UPS systems.
  • Primary switch for 12V and 24V systems.

FDB24AN06LA0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB24AN06LA0?

60V maximum.

What package does the FDB24AN06LA0 come in?

TO-263-3 (D²Pak, TO-263AB), surface mount.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the FDB24AN06LA0 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum continuous drain current?

40A at Tc=25°C with VGS=10V; 36A with VGS=5V; 7.8A at Ta=25°C.

What is the on-resistance (RDS(on))?

19mOhm maximum at VGS=10V, ID=40A; 24mOhm maximum at VGS=5V, ID=36A.

Is the part AEC-Q101 qualified?

Yes, it is qualified to AEC Q101 for automotive applications.

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