| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,565 pcs
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6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB24AN06LA0 is an N-Channel PowerTrench MOSFET manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is rated for a maximum drain-source voltage of 60V and can handle a continuous drain current of 40A at Tc=25°C (36A with 5V gate drive). The device features a low maximum on-resistance of 19mΩ at VGS=10V and ID=40A, and 24mΩ at VGS=5V and ID=36A. Typical gate charge is 16nC at 5V, enabling efficient switching with reduced drive requirements.
This MOSFET is designed for demanding automotive applications including motor and body load control, ABS systems, powertrain management, and injection systems. It is qualified to AEC Q101, ensuring reliability under extreme conditions. Additional capabilities include single pulse avalanche energy of 36mJ and low body diode QRR for improved efficiency in bridge topologies.
The device is supplied in a surface-mount TO-263AB (D²PAK) package with an exposed pad for effective thermal management. Maximum power dissipation is 75W at Tc=25°C, and the operating junction temperature range is -55°C to 175°C. Thermal resistance from junction to case is 2.0°C/W. The part is RoHS3 compliant and available in tape and reel packaging (800 units per reel) for automated assembly.
60V maximum.
TO-263-3 (D²Pak, TO-263AB), surface mount.
-55°C to 175°C (junction temperature).
Yes, it is RoHS3 compliant.
40A at Tc=25°C with VGS=10V; 36A with VGS=5V; 7.8A at Ta=25°C.
19mOhm maximum at VGS=10V, ID=40A; 24mOhm maximum at VGS=5V, ID=36A.
Yes, it is qualified to AEC Q101 for automotive applications.