DistyParts Icon
FDB1D7N10CL7 N-Channel Shielded Gate PowerTrench MOSFET from onsemi. Rated for 100V drain-source voltage and 268A continuous drain current at 25°C.
Mfr Part #:

FDB1D7N10CL7

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Shielded Gate PowerTrench MOSFET from onsemi. Rated for 100V drain-source voltage and 268A continuous drain current at 25°C.
✓ Total Stock: 270,899 pcs

FDB1D7N10CL7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
269,820 pcs
On Request
269820 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,079 pcs
On Request
1079 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDB1D7N10CL7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FDB1D7N10CL7 Description

Short technical summary and product information.

The FDB1D7N10CL7 is an N-Channel MOSFET manufactured by onsemi using advanced PowerTrench Shielded Gate technology. This process minimizes on-state resistance while maintaining superior switching performance with a best-in-class soft body diode.

 

Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 268A at 25°C (190A at 100°C), and pulsed drain current up to 1390A. The device features a maximum Rds(on) of 1.65 mΩ at Vgs=15V and Id=100A, with gate charge of 163 nC at Vgs=10V. It includes ESD protection with HBM >4 kV and CDM >2 kV.

 

The MOSFET is housed in a surface-mount D2PAK-7 package (TO-263-7, case code 418AY) and operates over a junction temperature range of -55°C to 175°C. It is suitable for industrial motor drives, power supplies, battery protection, solar inverters, and UPS systems.

FDB1D7N10CL7 Quick Information

Product Type: MOSFET
Series: FDB1D7N10CL7
Canonical Name: N-Channel Shielded Gate PowerTrench MOSFET, 100V, 268A, D2PAK-7
Subcategory: N-Channel MOSFET

FDB1D7N10CL7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB1D7N10CL7 Features

  • N-Channel Shielded Gate PowerTrench MOSFET.
  • Max Rds(on) of 1.65 mΩ at 15V, 100A.
  • Continuous drain current 268A at 25°C.
  • ESD protection HBM >4 kV, CDM >2 kV.
  • Surface-mount D2PAK-7 package.

FDB1D7N10CL7 Applications

  • Industrial motor drive and power supply.
  • Battery protection and management systems.
  • Solar inverter and UPS applications.
  • Load switch and energy storage systems.

FDB1D7N10CL7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB1D7N10CL7?

The maximum drain-source voltage (VDS) is 100 V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 268 A at Tc = 25°C.

What is the package type for this MOSFET?

The package is TO-263-7, D²Pak (6 Leads + Tab), also known as D2PAK (TO-263) with case code 418AY.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDB1D7N10CL7 RoHS compliant?

The part is listed as RoHS3 Compliant, though this is unverified.

What is the maximum on-resistance at 15V gate drive?

The maximum Rds(on) is 1.65 mΩ at Vgs = 15V and Id = 100A.

What is the gate charge of this MOSFET?

The maximum gate charge (Qg) is 163 nC at Vgs = 10V.

Home
Account

Categories