FDB14N30TM N-Channel MOSFET rated for 300V drain-source voltage and 14A continuous drain current, featuring 290mOhm on-resistance at 10V gate drive. Surface mount D²PAK package.
Mfr Part #:

FDB14N30TM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 300V drain-source voltage and 14A continuous drain current, featuring 290mOhm on-resistance at 10V gate drive. Surface mount D²PAK package.
✓ Total Stock: 3,264 pcs

FDB14N30TM Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,284 pcs
2284 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
800 pcs
800 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
180 pcs
180 pcs On Request 1 On Request On Request On Request On Request On Request

FDB14N30TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB14N30TM Description

Short technical summary and product information.

This is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 300V and a continuous drain current of 14A at case temperature.

 

The device offers a maximum on-resistance of 290mOhm at 7A drain current and 10V gate drive, with a gate charge of 25nC for efficient switching. Input capacitance is 1060pF at 25V drain-source.

 

The MOSFET is housed in a surface mount D²PAK (TO-263) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 140W.

 

This component is RoHS3 compliant and has an MSL of 1, indicating unlimited floor life. It is suitable for power management, DC-DC converters, and motor control circuits.

FDB14N30TM Quick Information

Product Type: MOSFET
Canonical Name: FDB14N30TM N-Channel MOSFET 300V 14A D²PAK
Subcategory: N-Channel MOSFET

FDB14N30TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB14N30TM Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • Continuous drain current rating of 14A.
  • Low on-resistance of 290mOhm at 10V gate drive.
  • Surface mount D²PAK package for automated assembly.
  • RoHS3 compliant with MSL 1 rating.

FDB14N30TM Applications

  • Used in high-voltage DC-DC converter circuits.
  • Suitable for power supply switching stages.
  • Ideal for motor drive and inverter applications.
  • Applied in battery management and protection systems.

FDB14N30TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB14N30TM?

300V.

What is the continuous drain current rating?

14A at case temperature.

What is the on-resistance?

290mOhm max at 7A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the FDB14N30TM available in?

Surface mount D²PAK (TO-263).

Is the FDB14N30TM RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate charge?

25nC max at 10V gate voltage.

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