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FDB13AN06A0 N-Channel MOSFET from On Semiconductor, 60V drain-source voltage, 62A continuous drain current (Tc), 13.5mOhm on-resistance, in a D2PAK (TO-263) surface mount package.
Mfr Part #:

FDB13AN06A0

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor, 60V drain-source voltage, 62A continuous drain current (Tc), 13.5mOhm on-resistance, in a D2PAK (TO-263) surface mount package.
✓ Total Stock: 2,336 pcs

FDB13AN06A0 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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2,336 pcs
On Request
2336 pcs On Request 1 On Request On Request On Request On Request On Request
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FDB13AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB13AN06A0 Description

Short technical summary and product information.

The FDB13AN06A0 is an N-Channel power MOSFET manufactured by On Semiconductor (formerly Fairchild). It features a drain-source voltage rating of 60V and a continuous drain current of 62A at case temperature (Tc=25°C). The device has a maximum on-resistance of 13.5mOhm at 10V gate drive and 62A drain current. The gate threshold voltage is 4V maximum at 250µA. The MOSFET offers low gate charge of 29nC at 10V and input capacitance of 1350pF at 25V, making it suitable for switching applications. It is housed in a D2PAK (TO-263) surface mount package and can operate over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 115W at case temperature 25°C. The device is designed for use in high-efficiency power conversion circuits, DC-DC converters, and motor control applications.

FDB13AN06A0 Quick Information

Product Type: MOSFET
Canonical Name: FDB13AN06A0 - N-Channel Power MOSFET, 60V, 62A, D2PAK (TO-263)
Subcategory: N-Channel Power MOSFET

FDB13AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB13AN06A0 Features

  • N-Channel MOSFET with 60V drain-source voltage rating.
  • Continuous drain current of 62A at case temperature 25°C.
  • Low on-resistance of 13.5mOhm at 10V gate drive.
  • Low gate charge of 29nC for efficient switching.
  • Surface mount D2PAK (TO-263) package.

FDB13AN06A0 Applications

  • Used in high-efficiency DC-DC converter circuits.
  • Suitable for motor control and power management.
  • Ideal for switching power supplies and load switching.
  • Employed in automotive and industrial power systems.

FDB13AN06A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB13AN06A0?

60V.

What is the maximum continuous drain current?

62A at case temperature 25°C, or 10.9A at ambient temperature 25°C.

What is the on-resistance of the MOSFET?

13.5mOhm maximum at 62A and 10V gate drive.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What package is the FDB13AN06A0 available in?

D2PAK (TO-263) surface mount, also known as TO-263-3, D²Pak.

Is the device RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate charge?

29nC maximum at 10V gate voltage.

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