FDB12N50TM N-Channel MOSFET from ON Semiconductor with 500V drain-source voltage and 11.5A continuous drain current. Surface mount D2PAK package.
Mfr Part #:

FDB12N50TM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from ON Semiconductor with 500V drain-source voltage and 11.5A continuous drain current. Surface mount D2PAK package.
✓ Total Stock: 67,826 pcs

FDB12N50TM Available from 3 distributors

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FDB12N50TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB12N50TM Description

Short technical summary and product information.

The FDB12N50TM is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11.5A at 25°C case temperature. The on-resistance (Rds(on)) is 650mOhm maximum at 6A drain current and 10V gate-source voltage. The gate threshold voltage is 5V maximum at 250µA drain current.

 

This MOSFET offers a gate charge of 30nC at 10V and an input capacitance of 1315pF at 25V drain-source voltage, making it suitable for moderate-speed switching. The maximum gate-source voltage is ±30V, and the recommended drive voltage is 10V. Power dissipation is rated at 165W at 25°C case temperature.

 

The device is housed in a surface mount D2PAK (TO-263-3) package, which provides efficient thermal performance. It operates over a junction temperature range of -55°C to 150°C. The FDB12N50TM is RoHS3 compliant and has a moisture sensitivity level (MSL) of 1 (unlimited).

FDB12N50TM Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDB12N50TM N-Channel MOSFET, 500V, 11.5A, D2PAK
Subcategory: Single MOSFET

FDB12N50TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB12N50TM Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 11.5A.
  • Low on-resistance of 650mOhm maximum.
  • Surface mount D2PAK package for easy assembly.
  • RoHS3 compliant and MSL 1 rated.

FDB12N50TM Applications

  • Used in high-voltage DC-DC converters.
  • Suitable for power supply switching circuits.
  • Ideal for motor control applications.
  • Applied in inverter and UPS systems.

FDB12N50TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB12N50TM?

500V.

What is the continuous drain current rating?

11.5A at 25°C case temperature.

What is the on-resistance of this MOSFET?

650mOhm maximum at 6A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is the FDB12N50TM available in?

Surface mount D2PAK (TO-263-3).

Is the FDB12N50TM RoHS compliant?

Yes, RoHS3 compliant (low confidence, unverified).

What is the gate threshold voltage?

5V maximum at 250µA drain current.

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