| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,130 pcs
|
9130 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB120N10 is an N-Channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 74A at case temperature. The device offers a low drain-source on-resistance of 12mOhm at 10V gate drive, minimizing conduction losses. With a gate threshold voltage of 4.5V at 250µA, it is suitable for logic-level drive. The MOSFET has a maximum power dissipation of 170W and operates over a junction temperature range of -55°C to 175°C. It is housed in a surface-mount D²PAK (TO-263) package, which provides excellent thermal performance. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited). Typical applications include power supplies, DC-DC converters, and motor control circuits.
100V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
12mOhm at 74A, 10V gate drive.
86 nC at 10V gate-source voltage.
5605 pF at 25V drain-source voltage.