| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDB110N15A is an N-Channel MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for high-power switching applications. Key electrical specifications include a maximum drain-to-source voltage of 150V and a continuous drain current rating of 92A at case temperature.
The device features a low maximum on-resistance of 11 milliohms at a gate drive of 10V and 92A drain current. Gate charge is 61 nC at 10V, and input capacitance is 4510 pF at 75V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA. The maximum gate-source voltage is ±20V.
Thermal characteristics include a maximum power dissipation of 234W at case temperature and an operating junction temperature range of -55°C to 175°C. The MOSFET is surface mountable and packaged in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, with supplier device package D²PAK (TO-263).
150V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, with supplier device package D²PAK (TO-263).
-55°C to 175°C (junction temperature).
It is listed as RoHS3 Compliant, but this is unverified.
61 nC at 10V gate-source voltage.
11 milliohms at 92A drain current and 10V gate drive.
92A at case temperature.