| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,540 pcs
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8540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,941 pcs
|
2941 pcs | On Request | 1 | On Request | On Request | 1742+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB088N08 is a single N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications. With a drain-to-source voltage (Vdss) of 75V and a continuous drain current of 120A, it is suitable for moderate-voltage, high-current switching circuits. The device features a low on-resistance of 8.8mΩ (maximum) at a gate-source voltage of 10V and a drain current of 75A, ensuring minimal conduction losses. The gate threshold voltage is typically 4V (maximum at 250µA), and the gate charge is 118nC at 10V, facilitating efficient gate drive design. The input capacitance is 6595pF at 25V drain-source voltage. The device is surface-mounted in a D²PAK (TO-263) package, which offers good thermal performance with a maximum power dissipation of 160W. The operating junction temperature range is -55°C to 175°C. This MOSFET is suitable for applications such as switching power supplies, DC-DC converters, and motor control circuits.
The drain-to-source voltage (Vdss) is 75V.
The continuous drain current (Tc) is 120A.
The maximum on-resistance is 8.8mΩ at Vgs=10V, Id=75A.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface-mount D²PAK (TO-263) package.
The RoHS status is listed as RoHS3 compliant, but this is unverified.
The maximum gate charge is 118nC at Vgs=10V.