| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,368 pcs
|
2368 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB075N15A-F085 is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications. With a drain-source voltage rating of 150V and continuous drain current of 110A, this MOSFET can handle demanding power loads. The device features a low typical on-resistance of 7.5mOhm at 80A and 10V gate drive, minimizing conduction losses. The gate threshold voltage is 4V maximum at 250µA, and the gate charge is 95nC at 10V. Input capacitance is 5595pF at 75V drain-source. The MOSFET is capable of dissipating up to 333W of power. It is housed in a surface mount D2PAK (TO-263) package, suitable for automated assembly. The operating temperature range is -55°C to 175°C. This component is RoHS3 compliant and has an MSL of 1 (unlimited). It is commonly used in automotive and industrial power systems, DC-DC converters, and motor control circuits.
The drain-source voltage (Vdss) is 150V.
The continuous drain current (Id) is 110A.
The maximum on-resistance (Rds on) is 7.5mOhm at Id=80A and Vgs=10V.
It is available in a surface mount D2PAK (TO-263) package.
The operating temperature range is -55°C to 175°C (junction).
Yes, it is RoHS3 compliant (unverified).
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.