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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
96,000 pcs
|
96000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
286 pcs
|
286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
205 pcs
|
205 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current Continuous (Maximum @ Tc=100 °C) | |
| Drain Current Continuous (Maximum @ Tc=25 °C) | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) (Maximum @ AC (f > 1 Hz) | |
| Gate to Source Voltage (Vgs) (Maximum @ DC) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulsed Avalanche Energy | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance (RθJA) (Maximum @ 1 in² pad of 2-oz copper) | |
| Thermal Resistance (RθJA) (Maximum @ Minimum pad of 2-oz copper) | |
| Thermal Resistance - Junction to Case | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB075N15A is an N-Channel Power MOSFET produced with onsemi's advanced POWERTRENCH process. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is rated for a drain-to-source voltage of 150V and a continuous drain current of 130A at Tc=25°C (package-limited to 120A).
Key electrical characteristics include a maximum drain-source on-resistance of 7.5mΩ at VGS=10V and ID=100A, with a typical value of 6.25mΩ. Maximum gate threshold voltage is 4V at ID=250µA. The device can handle pulsed drain current up to 522A and offers a single-pulsed avalanche energy rating of 588mJ. Maximum power dissipation is 333W at Tc=25°C.
Designed for high-power switching applications, the FDB075N15A features low gate charge (100nC maximum) and low input capacitance (7350pF maximum at VDS=75V). The operating junction temperature range is -55°C to 175°C. The thermal resistance from junction to case is 0.45°C/W, supporting efficient heat transfer.
The device is available in a TO-263-3 (D2PAK) surface-mount package, with a supplier device package designation of D2PAK (TO-263). It is RoHS compliant. Common applications include synchronous rectification in ATX/server/telecom PSUs, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.
The maximum drain-to-source voltage (Vdss) is 150V.
The FDB075N15A is offered in a TO-263-3 (D2PAK) surface-mount package with supplier device package D2PAK (TO-263).
The junction operating temperature range is -55°C to 175°C.
Yes, the datasheet states the device is RoHS compliant.
The maximum continuous drain current is 130A at Tc=25°C and 92A at Tc=100°C.
The RDS(on) is 6.25mΩ typical and 7.5mΩ maximum at VGS=10V and ID=100A.
The maximum power dissipation is 333W at Tc=25°C.