| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
119,454 pcs
|
119454 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB0630N1507L is a surface-mount N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-power switching applications requiring low on-resistance and high efficiency. The device is rated for a maximum drain-source voltage of 150V and a continuous drain current of 130A at case temperature (Tc). The on-resistance is typically 6.4 mOhm at 18A and 10V gate drive, ensuring minimal conduction losses.
Key electrical characteristics include a gate threshold voltage of 4V maximum at 250µA, a gate charge of 135 nC at 10V, and an input capacitance of 9895 pF at 75V drain-source voltage. The device can dissipate up to 300W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The FDB0630N1507L is housed in a TO-263-7 (D2Pak) package with 6 leads plus tab, designed for surface mounting. This package offers good thermal performance for high-power applications. The MOSFET is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
150V.
TO-263-7 (D2Pak with 6 leads plus tab).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
130A at case temperature.
4V maximum at 250µA.
6.4 mOhm maximum at 18A and 10V.