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FDB060AN08A0 The FDB060AN08A0 is a surface-mount N-Channel power MOSFET from ON Semiconductor. It features a 75V drain-source voltage rating, 80A continuous drain current, and a low 6mOhm on-resistance.
Mfr Part #:

FDB060AN08A0

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDB060AN08A0 is a surface-mount N-Channel power MOSFET from ON Semiconductor. It features a 75V drain-source voltage rating, 80A continuous drain current, and a low 6mOhm on-resistance.
✓ Total Stock: 32,269 pcs

FDB060AN08A0 Available from 3 distributors

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31,200 pcs
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883 pcs
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186 pcs
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FDB060AN08A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB060AN08A0 Description

Short technical summary and product information.

The FDB060AN08A0 is a high-performance N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for applications requiring efficient power switching and management. The device utilizes advanced MOSFET technology to achieve low on-resistance and fast switching characteristics.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 75V, a continuous drain current of 80A at Tc=25°C, and a maximum on-resistance (Rds(on)) of 6mOhm at 10V gate drive. The gate charge is 95nC and input capacitance is 5150pF, making it suitable for high-frequency switching circuits.

 

This MOSFET is housed in a surface-mount D2PAK (TO-263) package, which offers excellent thermal performance with a maximum power dissipation of 255W. The operating junction temperature range is -55°C to 175°C, ensuring reliability in harsh environments.

 

Typical applications include power supplies, motor drives, and battery management systems where high efficiency and compact design are required. The device is RoHS compliant and has a moisture sensitivity level of 1, making it suitable for automated assembly processes.

FDB060AN08A0 Quick Information

Product Type: MOSFET
Canonical Name: FDB060AN08A0 - N-Channel Power MOSFET, 75V, 80A, D2PAK
Subcategory: N-Channel Power MOSFET

FDB060AN08A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB060AN08A0 Features

  • N-Channel enhancement mode power MOSFET.
  • Rated for 75V drain-source voltage.
  • Handles 80A continuous drain current.
  • Low on-resistance of 6mOhm typical.
  • Surface-mount D2PAK (TO-263) package.

FDB060AN08A0 Applications

  • Used in power supply conversion circuits.
  • Suitable for motor drive and control.
  • Ideal for battery management systems.
  • Applicable in DC-DC converters.
  • Used in high-current switching loads.

FDB060AN08A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB060AN08A0?

The drain-to-source voltage (Vdss) is 75V.

What is the package type for this MOSFET?

The device is available in a TO-263-3 (D²Pak) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDB060AN08A0 RoHS compliant?

Yes, the device is listed as RoHS3 compliant, though this information is unverified.

What is the gate charge of the FDB060AN08A0?

The maximum gate charge (Qg) is 95 nC at Vgs = 10V.

What is the input capacitance?

The maximum input capacitance (Ciss) is 5150 pF at Vds = 25V.

What is the on-resistance?

The maximum on-resistance is 6 mOhm at Id = 80A and Vgs = 10V.

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