| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
62,620 pcs
|
62620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,620 pcs
|
1620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency switching applications. It is rated for a maximum drain-source voltage of 60V and can handle continuous drain currents of 80A (at Tc) or 18A (at Ta).
The device features a low on-resistance of 5mOhm (max) at Vgs=10V and Id=80A, which minimizes conduction losses. Gate charge is 80nC (max) at Vgs=10V, and input capacitance is 3900pF (max) at Vds=25V. The threshold voltage is 4V (max) at Id=250µA.
The MOSFET is housed in a D2PAK (TO-263) surface mount package, which provides good thermal performance with a maximum power dissipation of 245W (Tc). It operates over a junction temperature range of -55°C to 175°C.
Typical applications include power supplies, motor control, and DC-DC converters. The device is RoHS3 compliant (unverified) and has an MSL level of 1.
60V.
Surface mount D2PAK (TO-263) package.
-55°C to 175°C (junction temperature).
Yes, it is listed as RoHS3 compliant, but this status is unverified.
80A at case temperature (Tc) or 18A at ambient temperature (Ta).
5mOhm max at 80A and 10V gate drive.
80nC max at 10V gate voltage.