FDB047N10 FDB047N10 is an N-Channel Power MOSFET from On Semiconductor. It features a 100V drain-source voltage, 120A continuous drain current, and low on-resistance of 4.7mOhm at 10V gate drive.
Mfr Part #:

FDB047N10

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB047N10 is an N-Channel Power MOSFET from On Semiconductor. It features a 100V drain-source voltage, 120A continuous drain current, and low on-resistance of 4.7mOhm at 10V gate drive.
✓ Total Stock: 5,200 pcs

FDB047N10 Available from 4 distributors

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3,100 pcs
3100 pcs On Request 1 On Request On Request 2011 On Request On Request
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1,207 pcs
1207 pcs On Request 1 On Request On Request On Request On Request On Request
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793 pcs
793 pcs On Request 1 On Request On Request 11+ On Request On Request
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100 pcs
100 pcs On Request 1 On Request On Request 1143 On Request On Request

FDB047N10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB047N10 Description

Short technical summary and product information.

The FDB047N10 is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power conversion applications. With a maximum drain-source voltage of 100V and a continuous drain current of 120A (Tc), this MOSFET provides high current handling capability. The device features a low on-resistance of 4.7mOhm max at Vgs=10V and Id=75A, minimizing conduction losses. The gate charge is 210nC at 10V, and input capacitance is 15265pF at 25V drain-source. The MOSFET is surface-mounted in a D²PAK (TO-263) package, which offers good thermal performance with a maximum power dissipation of 375W. The operating junction temperature range is -55°C to 175°C. This device is suitable for switching power supplies, motor control, and other high-current applications.

FDB047N10 Quick Information

Product Type: N-Channel Power MOSFET
Series: PowerTrench
Canonical Name: FDB047N10 N-Channel MOSFET, 100V, 120A, D²PAK (TO-263)
Subcategory: Single N-Channel MOSFET

FDB047N10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB047N10 Features

  • N-Channel enhancement mode Power MOSFET.
  • 100V drain-source voltage rating.
  • 120A continuous drain current capability.
  • Low on-resistance of 4.7mOhm at 10V.
  • Surface mount D²PAK (TO-263) package.

FDB047N10 Applications

  • Used in DC-DC converter circuits.
  • Suitable for motor drive applications.
  • Ideal for power management in telecom systems.
  • Applicable in battery protection circuits.
  • Can be used in high-current switching power supplies.

FDB047N10 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB047N10?

The maximum drain-source voltage is 100V.

What package is the FDB047N10 available in?

The device is available in a surface mount D²PAK (TO-263) package.

What is the operating temperature range of the FDB047N10?

The operating junction temperature range is -55°C to 175°C.

Is the FDB047N10 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified. Verify with manufacturer.

What is the on-resistance of the FDB047N10?

The maximum drain-source on-resistance is 4.7mOhm at 75A and 10V gate drive.

What is the gate charge of the FDB047N10?

The maximum gate charge is 210nC at 10V.

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