| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request | |
|
1,207 pcs
|
1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
793 pcs
|
793 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 1143 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB047N10 is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power conversion applications. With a maximum drain-source voltage of 100V and a continuous drain current of 120A (Tc), this MOSFET provides high current handling capability. The device features a low on-resistance of 4.7mOhm max at Vgs=10V and Id=75A, minimizing conduction losses. The gate charge is 210nC at 10V, and input capacitance is 15265pF at 25V drain-source. The MOSFET is surface-mounted in a D²PAK (TO-263) package, which offers good thermal performance with a maximum power dissipation of 375W. The operating junction temperature range is -55°C to 175°C. This device is suitable for switching power supplies, motor control, and other high-current applications.
The maximum drain-source voltage is 100V.
The device is available in a surface mount D²PAK (TO-263) package.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this status is unverified. Verify with manufacturer.
The maximum drain-source on-resistance is 4.7mOhm at 75A and 10V gate drive.
The maximum gate charge is 210nC at 10V.