FDB045AN08A0 FDB045AN08A0 is an N-Channel power MOSFET from onsemi with a 75V drain-source voltage rating and 90A continuous drain current. It features a low 4.5mOhm on-resistance at 10V gate drive.
Mfr Part #:

FDB045AN08A0

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB045AN08A0 is an N-Channel power MOSFET from onsemi with a 75V drain-source voltage rating and 90A continuous drain current. It features a low 4.5mOhm on-resistance at 10V gate drive.
✓ Total Stock: 34,481 pcs

FDB045AN08A0 Available from 5 distributors

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FDB045AN08A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB045AN08A0 Description

Short technical summary and product information.

The FDB045AN08A0 is an N-Channel enhancement-mode power MOSFET manufactured by onsemi using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion applications requiring a 75V drain-to-source voltage rating and a continuous drain current of 90A at case temperature (Tc).

 

This device features a maximum drain-source on-resistance of 4.5 milliohms at 80A drain current with a 10V gate drive, enabling low conduction losses. The gate charge is 138 nC at 10V, and the input capacitance is 6600 pF at 25V drain-source voltage. The maximum gate threshold voltage is 4V at 250 microamps drain current.

 

The FDB045AN08A0 is offered in a surface-mount D2PAK (TO-263) package, specifically the TO-263-3, D2Pak (2 Leads + Tab), TO-263AB case style. It can dissipate up to 310W at case temperature and operates over a junction temperature range of -55°C to 175°C.

FDB045AN08A0 Quick Information

Product Type: Power MOSFET
Canonical Name: FDB045AN08A0 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDB045AN08A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB045AN08A0 Features

  • N-Channel MOSFET with 75V drain-source rating.
  • 90A continuous drain current at case temperature.
  • Low 4.5mOhm maximum on-resistance at 10V.
  • Surface mount D2PAK (TO-263) package.
  • Operates from -55°C to 175°C junction temperature.

FDB045AN08A0 Applications

  • High-efficiency DC-DC converter circuits.
  • Motor drive and power management systems.
  • Battery protection and load switching.
  • Automotive and industrial power applications.

FDB045AN08A0 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB045AN08A0?

The maximum drain-to-source voltage (Vdss) is 75 V.

What is the maximum continuous drain current?

The maximum drain current is 19 A at ambient temperature (Ta) and 90 A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 4.5 mOhm at a drain current of 80 A and gate-source voltage of 10 V.

What package does the FDB045AN08A0 come in?

It is available in a surface-mount TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package, also known as D2PAK (TO-263).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDB045AN08A0 RoHS compliant?

The part is listed as RoHS3 Compliant, though this data is unverified and should be confirmed with the manufacturer.

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