Mfr Part #:

FDB035N10A

Available from 4 distributors

Mfr Name: On Semiconductor

N-Channel MOSFET, 100V drain-source voltage, 120A continuous current (package limited), 3.5mOhm on-resistance.

✓ Total Stock: 23,318 pcs

FDB035N10A Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	18,620 pcs On Request	18620 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,837 pcs On Request	1837 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	1,600 pcs On Request	1600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,261 pcs On Request	1261 pcs	On Request	1	On Request	On Request	11+	On Request	On Request

FDB035N10A Description

Short technical summary and product information.

The FDB035N10A is an N-Channel power MOSFET manufactured using onsemi’s advanced POWERTRENCH process. It features a drain-source voltage rating of 100V and is capable of handling continuous drain current up to 120A (package limited) or 214A (silicon limited). The device offers a low maximum on-resistance of 3.5 mOhm at Vgs=10V with a typical value of 3.0 mOhm, enabling efficient power conversion.

Key electrical characteristics include a low gate charge (89 nC typical) and input capacitance of 7295 pF, supporting fast switching performance. The MOSFET is designed for high-power applications such as synchronous rectification in ATX/server/telecom power supplies, battery protection circuits, motor drives, and micro solar inverters.

The device is housed in a TO-263-3 (D2PAK) surface-mount package with an operating junction temperature range of -55°C to 175°C. It is RoHS3 compliant per the datasheet.

FDB035N10A Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FDB035N10A N-Channel Power MOSFET

Subcategory: N-Channel MOSFET

FDB035N10A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDB035N10A Features

N-Channel MOSFET with 100V drain-source voltage rating.
Continuous drain current up to 120A (package limited).
Low on-resistance of 3.5 mOhm maximum at 10V gate drive.
Fast switching with low gate charge of 89 nC typical.
Designed for synchronous rectification in power supplies.

FDB035N10A Applications

Synchronous rectification in ATX/server/telecom power supplies.
Battery protection circuits.
Motor drives and uninterruptible power supplies.
Micro solar inverter applications.

FDB035N10A FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDB035N10A?

100V maximum.

What package is the FDB035N10A available in?

TO-263-3 (D2PAK) surface mount package.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FDB035N10A RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the maximum continuous drain current?

120A package limited at Tc=25°C; 214A silicon limited.

What is the typical on-resistance?

3.0 mOhm at Vgs=10V, Id=75A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7295 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	333W (Tc)
Rds On (Max) @ Id, Vgs	3.5mOhm @ 75A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA