| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,133 pcs
|
3133 pcs | On Request | 1 | On Request | On Request | 1852+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB035AN06A0 is an N-Channel power MOSFET from onsemi, designed for high-efficiency power conversion applications. It features a drain-source voltage rating of 60V and a continuous drain current of 22A at ambient temperature (Ta) and 80A at case temperature (Tc). The device offers a low maximum on-resistance of 3.5mOhm at Vgs=10V and Id=80A, minimizing conduction losses.
With a gate charge of 124nC at 10V and input capacitance of 6400pF at 25V, the MOSFET is suitable for switching applications requiring moderate speed. The maximum power dissipation is 310W at case temperature. The device operates over a junction temperature range of -55°C to 175°C.
Packaged in a surface-mount D²PAK (TO-263) package, the FDB035AN06A0 is compatible with standard reflow soldering processes. The package provides excellent thermal performance for high-power applications. This MOSFET is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
60V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
3.5 mOhm at Vgs=10V, Id=80A.
124 nC at Vgs=10V.
310W at case temperature.