FDB035AN06A0 N-Channel MOSFET, 60V drain-source voltage, 22A continuous current (Ta) / 80A (Tc), with low 3.5mOhm on-resistance. Surface mount package D²PAK (TO-263).
Mfr Part #:

FDB035AN06A0

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 60V drain-source voltage, 22A continuous current (Ta) / 80A (Tc), with low 3.5mOhm on-resistance. Surface mount package D²PAK (TO-263).
✓ Total Stock: 4,155 pcs

FDB035AN06A0 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,133 pcs
3133 pcs On Request 1 On Request On Request 1852+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
22 pcs
22 pcs On Request 1 On Request On Request On Request On Request On Request

FDB035AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB035AN06A0 Description

Short technical summary and product information.

The FDB035AN06A0 is an N-Channel power MOSFET from onsemi, designed for high-efficiency power conversion applications. It features a drain-source voltage rating of 60V and a continuous drain current of 22A at ambient temperature (Ta) and 80A at case temperature (Tc). The device offers a low maximum on-resistance of 3.5mOhm at Vgs=10V and Id=80A, minimizing conduction losses.

 

With a gate charge of 124nC at 10V and input capacitance of 6400pF at 25V, the MOSFET is suitable for switching applications requiring moderate speed. The maximum power dissipation is 310W at case temperature. The device operates over a junction temperature range of -55°C to 175°C.

 

Packaged in a surface-mount D²PAK (TO-263) package, the FDB035AN06A0 is compatible with standard reflow soldering processes. The package provides excellent thermal performance for high-power applications. This MOSFET is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

FDB035AN06A0 Quick Information

Product Type: Single MOSFET
Canonical Name: N-Channel MOSFET, 60V, 22A (Ta) / 80A (Tc), D²PAK (TO-263)
Subcategory: N-Channel MOSFET

FDB035AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB035AN06A0 Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Low on-resistance of 3.5mOhm at 10V gate drive.
  • High current rating of 80A at case temperature.
  • Surface mount D²PAK (TO-263) package.
  • RoHS3 compliant and MSL 1 unlimited.

FDB035AN06A0 Applications

  • Used in DC-DC converter power stages.
  • Suitable for motor drive and power management.
  • Ideal for high-efficiency switching applications.
  • Applicable in automotive and industrial systems.

FDB035AN06A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What package is the FDB035AN06A0 available in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FDB035AN06A0 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum on-resistance?

3.5 mOhm at Vgs=10V, Id=80A.

What is the gate charge?

124 nC at Vgs=10V.

What is the maximum power dissipation?

310W at case temperature.

Home
Account

Categories