| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,803 pcs
|
1803 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
65 pcs
|
65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB031N08 is an N-Channel power MOSFET manufactured by ON Semiconductor, designed for high-efficiency power switching applications. It features a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 120A at case temperature Tc. The device achieves a low maximum on-state resistance (Rds(on)) of 3.1 mOhm at Vgs = 10V and Id = 75A, minimizing conduction losses.
The MOSFET utilizes standard MOSFET (Metal Oxide) technology and offers a maximum power dissipation of 375W at Tc. It supports a maximum gate threshold voltage (Vgs(th)) of 4.5V and a maximum gate charge (Qg) of 220 nC at Vgs = 10V, indicating moderate switching speed. Input capacitance (Ciss) is typically 15160 pF at Vds = 25V.
The device is housed in a D²PAK (TO-263) surface mount package with three leads and a tab for heat sinking. It operates over a junction temperature range of -55°C to 175°C, suitable for demanding industrial environments. The part is RoHS3 compliant and MSL 1 rated.
75V.
TO-263-3, D²Pak (2 leads + tab), TO-263AB; supplier device package D²PAK (TO-263).
-55°C to 175°C (junction).
Yes, it is listed as RoHS3 compliant.
3.1 mOhm at Id=75A, Vgs=10V.
220 nC at Vgs=10V (max).
120A at case temperature Tc.