| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,496 pcs
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2496 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB0300N1007L is an N-Channel power MOSFET from On Semiconductor designed for high-current switching applications. It is rated for a maximum drain-source voltage of 100V and a continuous drain current of 200A at the case temperature. The device features a very low maximum on-resistance of 3 mOhm when driven with a 10V gate-source voltage, enabling efficient power conversion with minimal conduction losses.
This MOSFET offers a maximum gate charge of 113 nC and an input capacitance of 8295 pF at 50V drain-source bias, which are important parameters for estimating switching performance. The gate threshold voltage is specified with a maximum of 4V at 250 µA drain current. The device can dissipate up to 250W at the case and 3.8W at ambient temperature, with an operating junction temperature range from -55°C to +175°C.
The FDB0300N1007L is supplied in a surface-mount TO-263-7 (D²Pak with 6 leads and tab) package, suitable for automated assembly. Typical applications include high-efficiency DC-DC converters, motor drives, and power management systems where low on-resistance and high current capability are required.
The maximum drain-source voltage (Vdss) is 100V.
The maximum continuous drain current (Id) is 200A, rated at the case temperature.
The maximum on-resistance (Rds on) is 3 mOhm at a gate-source voltage of 10V and drain current of 26A.
It is available in a surface-mount TO-263-7 (D²Pak with 6 leads and tab) package.
The operating junction temperature range is -55°C to +175°C.
The maximum gate charge (Qg) is 113 nC at a gate-source voltage of 10V.
The maximum input capacitance (Ciss) is 8295 pF at a drain-source voltage of 50V.