| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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790 pcs
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790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB029N06 is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 120A at case temperature. The device utilizes MOSFET (Metal Oxide) technology and offers a low maximum on-resistance of 3.1mOhm at a gate drive of 10V and drain current of 75A.
Key electrical characteristics include a maximum gate threshold voltage of 4.5V at 250µA, a gate charge of 151nC at 10V, and an input capacitance of 9815pF at 25V drain-source voltage. The device can dissipate up to 231W and operates over a junction temperature range of -55°C to 175°C.
The FDB029N06 is supplied in a surface-mount D2PAK (TO-263) package with 3 leads and a tab. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The part is suitable for power management, motor control, and DC-DC converter circuits where high efficiency and thermal performance are required.
60V.
120A at case temperature (Tc).
D2PAK (TO-263) surface mount package.
-55°C to 175°C (junction temperature).
Yes, RoHS3 compliant (unverified).
3.1mOhm at 75A drain current and 10V gate voltage.
4.5V at 250µA drain current.