| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDB024N08BL7 is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency power conversion. It features a drain-source voltage rating of 80V and a continuous drain current of 120A at case temperature.
Key electrical characteristics include a maximum on-resistance of 2.4mOhm at 100A and 10V gate drive, a gate threshold voltage of 4.5V at 250µA, and a maximum gate charge of 178nC at 10V. Input capacitance is 13530pF at 40V drain-source.
The device is surface-mount packaged in a TO-263-7 (D²Pak with 6 leads plus tab) and operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 246W at case temperature.
This MOSFET is suitable for applications requiring high current handling and low conduction losses, such as power supplies, motor drives, and DC-DC converters.
80V.
TO-263-7, D²Pak (6 Leads + Tab).
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
2.4mOhm at 100A, 10V.
178nC at 10V.