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FDB024N04AL7 N-Channel MOSFET rated for 40V drain-source voltage and 100A drain current. Features 2.4mΩ on-resistance and surface-mount TO-263-7 package.
Mfr Part #:

FDB024N04AL7

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 40V drain-source voltage and 100A drain current. Features 2.4mΩ on-resistance and surface-mount TO-263-7 package.
✓ Total Stock: 4,000 pcs

FDB024N04AL7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
3,200 pcs
On Request
3200 pcs On Request 1 On Request On Request On Request On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
800 pcs
On Request
800 pcs On Request 1 On Request On Request 1107 On Request On Request
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FDB024N04AL7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB024N04AL7 Description

Short technical summary and product information.

FDB024N04AL7 is an N-Channel enhancement-mode power MOSFET from ON Semiconductor. It is rated for a maximum drain-source voltage of 40V and a continuous drain current of 100A at case temperature. The device features a low maximum on-resistance of 2.4mΩ at 80A drain current and 10V gate drive, enabling high-efficiency operation in power switching circuits.

 

With a maximum gate charge of 109nC and input capacitance of 7300pF, the MOSFET is designed for fast switching performance. The gate threshold voltage is 3V maximum, and the recommended drive voltage is 10V for full enhancement. Maximum power dissipation is 214W at case temperature.

 

The device is housed in a TO-263-7 (D²Pak) surface-mount package with 6 leads plus tab. It supports an operating junction temperature range of -55°C to 175°C, making it suitable for a variety of power conversion and load-switching applications.

 

This component is part of ON Semiconductor's discrete power MOSFET portfolio. It is a Pb-free and RoHS-compliant device per existing compliance information.

FDB024N04AL7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Power MOSFET, 40V, 100A, TO-263-7
Subcategory: Single N-Channel MOSFET

FDB024N04AL7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDB024N04AL7 Features

  • Rated for 40V drain-source voltage.
  • Supports up to 100A drain current.
  • Very low 2.4mΩ on-resistance rating.
  • Available in surface-mount TO-263-7 package.
  • Operates from -55°C to 175°C.

FDB024N04AL7 Applications

  • For high-current power supply switching.
  • Suitable for DC-DC converter circuits.
  • Use in motor control and load switching.

FDB024N04AL7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FDB024N04AL7?

The maximum drain-source voltage is 40V.

What package is FDB024N04AL7 available in?

The device comes in a TO-263-7, D²Pak (6 leads + tab) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is FDB024N04AL7 RoHS compliant?

RoHS3 compliant per existing data, though unverified.

What is the maximum drain current?

The continuous drain current is 100A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2.4mΩ at 80A drain current and 10V gate drive.

What is the gate charge?

The maximum gate charge is 109nC at 10V gate voltage.

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