| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31,420 pcs
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31420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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8,600 pcs
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8600 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
5,415 pcs
|
5415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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This N-Channel MOSFET from ON Semiconductor features a drain-source breakdown voltage of 80V and a continuous drain current rating of 270A at case temperature. The device offers a low maximum on-resistance of 1.7mOhm at 34A and 10V gate drive, enabling high efficiency in power conversion circuits. Gate charge is 249nC at 10V, and input capacitance is 19110pF at 40V drain-source voltage.
The MOSFET is capable of dissipating up to 250W at the case and 3.8W at ambient temperature, with an operating junction temperature range of -55°C to 175°C. It is housed in a surface-mount TO-263-7 (D²Pak with 6 leads plus tab) package, suitable for automated assembly. The device is RoHS3 compliant, MSL 1 (unlimited), and REACH unaffected, though these compliance statuses are unverified.
Typical applications include high-current power management, DC-DC converters, motor control, and battery protection circuits where low conduction losses and high current handling are required.
The drain-source breakdown voltage is 80V.
It is available in a surface mount TO-263-7 (D²Pak with 6 leads plus tab) package.
The operating junction temperature range is -55°C to 175°C.
The device is listed as RoHS3 Compliant, but this status is unverified.
The continuous drain current is 270A at case temperature 25°C.
The maximum on-resistance is 1.7mOhm at 34A drain current and 10V gate drive.
The maximum gate charge is 249nC at 10V gate-source voltage.