FDB0190N807L N-Channel MOSFET with 80V drain-source breakdown voltage and 270A continuous drain current. Features low on-resistance of 1.7mOhm at 10V gate drive.
Mfr Part #:

FDB0190N807L

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 80V drain-source breakdown voltage and 270A continuous drain current. Features low on-resistance of 1.7mOhm at 10V gate drive.
✓ Total Stock: 45,435 pcs

FDB0190N807L Available from 3 distributors

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5,415 pcs
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FDB0190N807L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB0190N807L Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor features a drain-source breakdown voltage of 80V and a continuous drain current rating of 270A at case temperature. The device offers a low maximum on-resistance of 1.7mOhm at 34A and 10V gate drive, enabling high efficiency in power conversion circuits. Gate charge is 249nC at 10V, and input capacitance is 19110pF at 40V drain-source voltage.

 

The MOSFET is capable of dissipating up to 250W at the case and 3.8W at ambient temperature, with an operating junction temperature range of -55°C to 175°C. It is housed in a surface-mount TO-263-7 (D²Pak with 6 leads plus tab) package, suitable for automated assembly. The device is RoHS3 compliant, MSL 1 (unlimited), and REACH unaffected, though these compliance statuses are unverified.

 

Typical applications include high-current power management, DC-DC converters, motor control, and battery protection circuits where low conduction losses and high current handling are required.

FDB0190N807L Quick Information

Product Type: MOSFET
Canonical Name: FDB0190N807L N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDB0190N807L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB0190N807L Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 270A.
  • Low on-resistance of 1.7mOhm at 10V.
  • Surface mount TO-263-7 package.
  • RoHS3 compliant and MSL 1 rated.

FDB0190N807L Applications

  • High-current power switching applications.
  • DC-DC converter designs.
  • Motor drive circuits.
  • Battery protection systems.
  • Power management in automotive systems.

FDB0190N807L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB0190N807L?

The drain-source breakdown voltage is 80V.

What package is the FDB0190N807L available in?

It is available in a surface mount TO-263-7 (D²Pak with 6 leads plus tab) package.

What is the operating temperature range of the FDB0190N807L?

The operating junction temperature range is -55°C to 175°C.

Is the FDB0190N807L RoHS compliant?

The device is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain current of the FDB0190N807L?

The continuous drain current is 270A at case temperature 25°C.

What is the on-resistance of the FDB0190N807L?

The maximum on-resistance is 1.7mOhm at 34A drain current and 10V gate drive.

What is the gate charge of the FDB0190N807L?

The maximum gate charge is 249nC at 10V gate-source voltage.

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